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Part Details for DMN2041UVT-7 by Diodes Incorporated
Overview of DMN2041UVT-7 by Diodes Incorporated
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for DMN2041UVT-7
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
68AH9539
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Newark | Mosfet, N-Ch, 20V, 5.8A, Tsot-26, Channel Type:N Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:20V, Continuous Drain Current Id N Channel:5.8A, Continuous Drain Current Id P Channel:5.8A Rohs Compliant: Yes |Diodes Inc. DMN2041UVT-7 Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 2865 |
|
$0.0900 | Buy Now |
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DISTI #
31-DMN2041UVT-7CT-ND
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DigiKey | MOSFET 2N-CH 20V 5.8A TSOT26 Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
2093 In Stock |
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$0.1010 / $0.4700 | Buy Now |
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DISTI #
DMN2041UVT-7
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Avnet Americas | MOSFET Enhancement Dual N-Channel 20V 6-Pin TSOT-26 T/R - Tape and Reel (Alt: DMN2041UVT-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 27000 Factory Stock |
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$0.0794 / $0.0938 | Buy Now |
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DISTI #
68AH9539
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Avnet Americas | MOSFET Enhancement Dual N-Channel 20V 6-Pin TSOT-26 T/R - Product that comes on tape, but is not reeled (Alt: 68AH9539) RoHS: Compliant Min Qty: 5 Package Multiple: 5 Lead time: 32 Weeks, 4 Days Container: Ammo Pack | 0 |
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$0.2290 / $0.5100 | Buy Now |
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DISTI #
621-DMN2041UVT-7
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Mouser Electronics | MOSFET MOSFET BVDSS: 8V-24V TSOT26 T&R 3K RoHS: Compliant | 14621 |
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$0.1000 / $0.4700 | Buy Now |
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DISTI #
V36:1790_24942919
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Arrow Electronics | Dual N-Channel Enhancement Mode MOSFET RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Date Code: 2244 | Americas - 3000 |
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$0.0534 / $0.0767 | Buy Now |
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Future Electronics | MOSFET BVDSS: 8V~24V TSOT26 T&R 3K RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.0844 / $0.0948 | Buy Now |
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DISTI #
DMN2041UVT-7
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Avnet Silica | MOSFET Enhancement Dual N-Channel 20V 6-Pin TSOT-26 T/R (Alt: DMN2041UVT-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days | Silica - 3000 |
|
Buy Now | |
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New Advantage Corporation | MOSFET BVDSS: 8V~24V TSOT26 T&R 3K RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 3000 |
|
$0.1470 | Buy Now |
Part Details for DMN2041UVT-7
DMN2041UVT-7 CAD Models
DMN2041UVT-7 Part Data Attributes
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DMN2041UVT-7
Diodes Incorporated
Buy Now
Datasheet
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DMN2041UVT-7
Diodes Incorporated
Small Signal Field-Effect Transistor,
|
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 32 Weeks, 4 Days | |
| Date Of Intro | 2019-10-15 | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Configuration | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 5.8 A | |
| Drain-source On Resistance-Max | 0.028 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 79 pF | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.44 W | |
| Pulsed Drain Current-Max (IDM) | 36 A | |
| Reference Standard | MIL-STD-202 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |