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Part Details for DMJ7N70SK3-13 by Diodes Incorporated
Overview of DMJ7N70SK3-13 by Diodes Incorporated
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for DMJ7N70SK3-13
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
DMJ7N70SK3-13
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Avnet Americas | Trans MOSFET N-CH 700V 3.9A 3-Pin TO-252 T/R - Tape and Reel (Alt: DMJ7N70SK3-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
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RFQ | |
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DISTI #
DMJ7N70SK3-13
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Avnet Silica | Trans MOSFET N-CH 700V 3.9A 3-Pin TO-252 T/R (Alt: DMJ7N70SK3-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days | Silica - 0 |
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Part Details for DMJ7N70SK3-13
DMJ7N70SK3-13 CAD Models
DMJ7N70SK3-13 Part Data Attributes
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DMJ7N70SK3-13
Diodes Incorporated
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Datasheet
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DMJ7N70SK3-13
Diodes Incorporated
Power Field-Effect Transistor, 3.9A I(D), 700V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | DIODES INC | |
| Package Description | DPAK-3/2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 700 V | |
| Drain Current-Max (ID) | 3.9 A | |
| Drain-source On Resistance-Max | 1.25 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 15.6 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |