-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 9.5A I(D), 20V, 0.016ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
28AK8421
|
Newark | Mosfet, Dual, N-Ch, 20V, 9.5A Rohs Compliant: Yes |Diodes Inc. DMG6898LSD-13 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1900 |
|
$0.3020 / $0.6490 | Buy Now |
DISTI #
DMG6898LSD-13DICT-ND
|
DigiKey | MOSFET 2N-CH 20V 9.5A 8SO Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
17863 In Stock |
|
$0.1969 / $0.7400 | Buy Now |
DISTI #
DMG6898LSD-13
|
Avnet Americas | Transistor MOSFET Array Dual N-CH 20V 9.5A 8-Pin SOIC T/R - Tape and Reel (Alt: DMG6898LSD-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel | 147500 Factory Stock |
|
$0.0205 / $0.0246 | Buy Now |
DISTI #
621-DMG6898LSD-13
|
Mouser Electronics | MOSFETs MOSFET N-CHAN RoHS: Compliant | 38921 |
|
$0.2300 / $0.5800 | Buy Now |
|
Future Electronics | DMG6898LSD Series 20 V 9.5 A Dual N-Channel Enhancement Mode Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks Container: Reel | 5000Reel |
|
$0.1930 / $0.2050 | Buy Now |
|
Future Electronics | DMG6898LSD Series 20 V 9.5 A Dual N-Channel Enhancement Mode Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks Container: Reel | 0Reel |
|
$0.1930 / $0.2050 | Buy Now |
DISTI #
DMG6898LSD-13
|
Avnet Silica | Transistor MOSFET Array Dual N-CH 20V 9.5A 8-Pin SOIC T/R (Alt: DMG6898LSD-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days | Silica - 17500 |
|
Buy Now | |
|
CHIPMALL.COM LIMITED | MOSFET 2N-CH 20V 9.5A 8SO | 17104 |
|
$0.1668 / $0.2405 | Buy Now |
|
LCSC | 20V 9.5A 23m4.5V8.7A 1.28W 1.5V250uA 2 N-Channel SO-8 MOSFETs ROHS | 5401 |
|
$0.1738 / $0.2505 | Buy Now |
|
New Advantage Corporation | DMG6898LSD Series 20 V 9.5 A Dual N-Channel Enhancement Mode Mosfet - SOIC-8 RoHS: Compliant Min Qty: 1 Package Multiple: 2500 | 10000 |
|
$0.2573 / $0.2757 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
DMG6898LSD-13
Diodes Incorporated
Buy Now
Datasheet
|
Compare Parts:
DMG6898LSD-13
Diodes Incorporated
Power Field-Effect Transistor, 9.5A I(D), 20V, 0.016ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Part Package Code | SOT | |
Package Description | SOP-8 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | Diodes Incorporated | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 9.5 A | |
Drain-source On Resistance-Max | 0.016 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 142 pF | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.28 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |