Part Details for DMG6601LVT-7-01 by Diodes Incorporated
Overview of DMG6601LVT-7-01 by Diodes Incorporated
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
Telecommunications
Automotive
Price & Stock for DMG6601LVT-7-01
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 3000 |
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RFQ |
Part Details for DMG6601LVT-7-01
DMG6601LVT-7-01 CAD Models
DMG6601LVT-7-01 Part Data Attributes
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DMG6601LVT-7-01
Diodes Incorporated
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Datasheet
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DMG6601LVT-7-01
Diodes Incorporated
Small Signal Field-Effect Transistor, 3.8A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | HIGH RELIABILITY | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 3.8 A | |
Drain-source On Resistance-Max | 0.055 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Nickel/Palladium/Gold - with Copper barrier | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |