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Transistors / Power Field-Effect Transistors / DMG6402LDM-7
Datasheets
DMG6402LDM-7 by: Diodes Incorporated

Power Field-Effect Transistor, 5.3A I(D), 30V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6

Part Details for DMG6402LDM-7 by Diodes Incorporated

Overview of DMG6402LDM-7 by Diodes Incorporated

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Applications Space Technology Aerospace and Defense

Price & Stock for DMG6402LDM-7

Part # Distributor Description Stock Price Buy
DISTI # 32AK9128
Newark Mosfet, N-Ch, 30V, 5.3A, Sot-26 Rohs Compliant: Yes |Diodes Inc. DMG6402LDM-7 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
  • 1 $0.4370
  • 10 $0.3430
  • 25 $0.2940
  • 50 $0.2450
  • 100 $0.1960
  • 250 $0.1790
  • 500 $0.1610
  • 1,000 $0.1430
$0.1430 / $0.4370 Buy Now
DISTI # DMG6402LDM-7DICT-ND
DigiKey MOSFET N-CH 30V 5.3A SOT26 Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 12497
In Stock
  • 1 $0.4000
  • 10 $0.3100
  • 100 $0.1863
  • 500 $0.1725
  • 1,000 $0.1173
  • 3,000 $0.1080
  • 6,000 $0.1035
  • 9,000 $0.0931
  • 30,000 $0.0917
  • 75,000 $0.0862
$0.0862 / $0.4000 Buy Now
DISTI # DMG6402LDM-7
Avnet Americas Trans MOSFET N-CH 30V 5.3A 6-Pin SOT-26 T/R - Tape and Reel (Alt: DMG6402LDM-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.0939
  • 6,000 $0.0905
  • 12,000 $0.0878
  • 18,000 $0.0853
  • 24,000 $0.0820
  • 30,000 $0.0808
  • 300,000 $0.0795
$0.0795 / $0.0939 Buy Now
DISTI # 621-DMG6402LDM-7
Mouser Electronics MOSFET MOSFET N-CHANNEL SOT-26 RoHS: Compliant 3692
  • 1 $0.4000
  • 10 $0.3100
  • 100 $0.1690
  • 1,000 $0.1180
  • 3,000 $0.1030
  • 9,000 $0.0980
$0.0980 / $0.4000 Buy Now
Future Electronics N-Channel 30 V 27 mOhm 1.12 W SMT Enhancement Mode Mosfet - SOT-26 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks Container: Reel 0
Reel
  • 3,000 $0.0911
  • 9,000 $0.0876
  • 12,000 $0.0867
  • 30,000 $0.0839
  • 45,000 $0.0811
$0.0811 / $0.0911 Buy Now
Future Electronics N-Channel 30 V 27 mOhm 1.12 W SMT Enhancement Mode Mosfet - SOT-26 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks Container: Reel 0
Reel
  • 3,000 $0.0911
  • 9,000 $0.0876
  • 12,000 $0.0867
  • 30,000 $0.0839
  • 45,000 $0.0811
$0.0811 / $0.0911 Buy Now
Bristol Electronics   16595
RFQ
Bristol Electronics   89
RFQ
Quest Components 5.3 A, 30 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET 13276
  • 1 $0.6200
  • 2,152 $0.1240
  • 6,453 $0.1085
$0.1085 / $0.6200 Buy Now
DISTI # DMG6402LDM-7
TME Transistor: N-MOSFET, unipolar, 30V, 4.2A, Idm: 31A, 1.12W, SOT26 Min Qty: 3 0
  • 3 $0.2600
  • 10 $0.1760
  • 30 $0.1590
  • 100 $0.1400
  • 500 $0.1260
$0.1260 / $0.2600 RFQ
DISTI # DMG6402LDM-7
Avnet Silica Trans MOSFET N-CH 30V 5.3A 6-Pin SOT-26 T/R (Alt: DMG6402LDM-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Silica - 0
Buy Now

Part Details for DMG6402LDM-7

DMG6402LDM-7 CAD Models

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DMG6402LDM-7 Part Data Attributes

Parametric Data
DMG6402LDM-7 Diodes Incorporated
Buy Now Datasheet
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DMG6402LDM-7 Diodes Incorporated Power Field-Effect Transistor, 5.3A I(D), 30V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer DIODES INC
Package Description GREEN, PLASTIC PACKAGE-6
Pin Count 6
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Diodes Incorporated
Additional Feature HIGH RELIABILITY
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 5.3 A
Drain-source On Resistance-Max 0.027 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.12 W
Pulsed Drain Current-Max (IDM) 31 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for DMG6402LDM-7

This table gives cross-reference parts and alternative options found for DMG6402LDM-7. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DMG6402LDM-7, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
ELM13404CA-S Power Field-Effect Transistor, 5.8A I(D), 30V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN ELM Technology Corp DMG6402LDM-7 vs ELM13404CA-S

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