Datasheets
DMG6402LDM-7 by:
Diodes Incorporated
Diodes Incorporated
Zetex / Diodes Inc
Not Found

Power Field-Effect Transistor, 5.3A I(D), 30V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6

Part Details for DMG6402LDM-7 by Diodes Incorporated

Overview of DMG6402LDM-7 by Diodes Incorporated

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Applications Space Technology Aerospace and Defense

Price & Stock for DMG6402LDM-7

Part # Distributor Description Stock Price Buy
DISTI # 32AK9128
Newark Mosfet, N-Ch, 30V, 5.3A, Sot-26 Rohs Compliant: Yes |Diodes Inc. DMG6402LDM-7 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 2795
  • 1 $0.4260
  • 10 $0.2910
  • 25 $0.2620
  • 50 $0.2320
  • 100 $0.2020
  • 250 $0.1830
  • 500 $0.1620
  • 1,000 $0.1480
$0.1480 / $0.4260 Buy Now
DISTI # DMG6402LDM-7DICT-ND
DigiKey MOSFET N-CH 30V 5.3A SOT26 Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 9263
In Stock
  • 1 $0.3900
  • 10 $0.2600
  • 100 $0.1758
  • 500 $0.1365
  • 1,000 $0.1234
  • 3,000 $0.1065
  • 6,000 $0.0979
  • 9,000 $0.0934
  • 15,000 $0.0884
  • 21,000 $0.0854
  • 30,000 $0.0854
$0.0854 / $0.3900 Buy Now
DISTI # DMG6402LDM-7
Avnet Americas Trans MOSFET N-CH 30V 5.3A 6-Pin SOT-26 T/R - Tape and Reel (Alt: DMG6402LDM-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel 573000 Factory Stock
  • 3,000 $0.1176
  • 6,000 $0.0768
  • 12,000 $0.0763
  • 18,000 $0.0760
  • 24,000 $0.0754
$0.0754 / $0.1176 Buy Now
DISTI # 621-DMG6402LDM-7
Mouser Electronics MOSFETs MOSFET N-CHANNEL SOT-26 RoHS: Compliant 2692
  • 1 $0.3900
  • 10 $0.2600
  • 100 $0.1370
  • 1,000 $0.1240
  • 3,000 $0.0980
$0.0980 / $0.3900 Buy Now
Future Electronics N-Channel 30 V 27 mOhm 1.12 W SMT Enhancement Mode Mosfet - SOT-26 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Container: Reel 0
Reel
  • 3,000 $0.0911
  • 9,000 $0.0876
  • 12,000 $0.0867
  • 30,000 $0.0839
  • 45,000 $0.0811
$0.0811 / $0.0911 Buy Now
Future Electronics N-Channel 30 V 27 mOhm 1.12 W SMT Enhancement Mode Mosfet - SOT-26 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Container: Reel 0
Reel
  • 3,000 $0.0911
  • 9,000 $0.0876
  • 12,000 $0.0867
  • 30,000 $0.0839
  • 45,000 $0.0811
$0.0811 / $0.0911 Buy Now
Bristol Electronics   16595
RFQ
Bristol Electronics   89
RFQ
Quest Components 5.3 A, 30 V, 0.027 OHM, N-CHANNEL, SI, POWER, MOSFET 13276
  • 1 $0.6200
  • 2,152 $0.1240
  • 6,453 $0.1085
$0.1085 / $0.6200 Buy Now
DISTI # DMG6402LDM-7
TME Transistor: N-MOSFET, unipolar, 30V, 4.2A, Idm: 31A, 1.12W, SOT26 Min Qty: 1 0
  • 1 $0.3600
  • 10 $0.2930
  • 30 $0.2340
  • 100 $0.1730
  • 500 $0.1210
  • 1,000 $0.1110
$0.1110 / $0.3600 RFQ
DISTI # DMG6402LDM-7
Avnet Silica Trans MOSFET N-CH 30V 5.3A 6-Pin SOT-26 T/R (Alt: DMG6402LDM-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Silica - 0
Buy Now
CHIPMALL.COM LIMITED MOSFET N-CH 30V 5.3A SOT26 12000
  • 5 $0.1506
  • 50 $0.1139
  • 150 $0.1000
  • 500 $0.0939
  • 2,500 $0.0902
$0.0902 / $0.1506 Buy Now
LCSC 30V 5.3A 1.12W 23m10V7A 2V250uA 1 N-Channel SOT-26 MOSFETs ROHS 11
  • 1 $0.1569
  • 10 $0.1301
  • 30 $0.1186
  • 100 $0.1042
  • 500 $0.0978
  • 1,000 $0.0940
$0.0940 / $0.1569 Buy Now
Win Source Electronics MOSFET N-CH 30V 5.3A SOT26 38535
  • 425 $0.1189
  • 900 $0.1113
  • 1,400 $0.1074
  • 2,005 $0.0998
  • 2,610 $0.0959
  • 3,260 $0.0921
$0.0921 / $0.1189 Buy Now

Part Details for DMG6402LDM-7

DMG6402LDM-7 CAD Models

DMG6402LDM-7 Part Data Attributes

DMG6402LDM-7 Diodes Incorporated
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DMG6402LDM-7 Diodes Incorporated Power Field-Effect Transistor, 5.3A I(D), 30V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer DIODES INC
Package Description GREEN, PLASTIC PACKAGE-6
Pin Count 6
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 8 Weeks
Samacsys Manufacturer Diodes Incorporated
Additional Feature HIGH RELIABILITY
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 5.3 A
Drain-source On Resistance-Max 0.027 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.12 W
Pulsed Drain Current-Max (IDM) 31 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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