Part Details for DMG4822SSD-13 by Diodes Incorporated
Overview of DMG4822SSD-13 by Diodes Incorporated
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for DMG4822SSD-13
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
28AK8418
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Newark | Mosfet, Dual, N-Ch, 30V, 10A Rohs Compliant: Yes |Diodes Inc. DMG4822SSD-13 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2459 |
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$0.3070 / $0.6240 | Buy Now |
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DISTI #
DMG4822SSD-13DICT-ND
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DigiKey | MOSFET 2N-CH 30V 10A 8SO Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1340 In Stock |
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$0.2134 / $1.0100 | Buy Now |
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DISTI #
DMG4822SSD-13
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Avnet Americas | Trans MOSFET Array Dual N-CH 30V 10A 8-Pin SO T/R - Tape and Reel (Alt: DMG4822SSD-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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$0.1546 / $0.2254 | Buy Now |
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DISTI #
621-DMG4822SSD-13
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Mouser Electronics | MOSFETs MOSFET BVDSS: 31V-40 1V-40V,SO-8,2.5K RoHS: Compliant | 9009 |
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$0.2550 / $0.7000 | Buy Now |
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DISTI #
A03:0893_05276582
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Arrow Electronics | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks Date Code: 2307 | Asia - 45000 |
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$0.1764 | Buy Now |
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DISTI #
V72:2272_06697767
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Arrow Electronics | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R RoHS: Compliant Min Qty: 563 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2305 Container: Cut Strips | Americas - 2134 |
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$0.1764 / $0.1776 | Buy Now |
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Future Electronics | Dual N-Channel 30 V 1.42 W 10.5 nC Enhancement Mode Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.1680 / $0.1810 | Buy Now |
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DISTI #
DMG4822SSD-13
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TME | Transistor: N-MOSFET, unipolar, 30V, 6.6A, Idm: 60A, 1.42W, SO8 Min Qty: 1 | 0 |
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$0.2310 / $0.5710 | RFQ |
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DISTI #
DMG4822SSD-13
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Avnet Asia | Trans MOSFET Array Dual N-CH 30V 10A 8-Pin SO T/R (Alt: DMG4822SSD-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days | 0 |
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$0.1606 / $0.1796 | Buy Now |
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DISTI #
DMG4822SSD-13
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Avnet Silica | Trans MOSFET Array Dual N-CH 30V 10A 8-Pin SO T/R (Alt: DMG4822SSD-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for DMG4822SSD-13
DMG4822SSD-13 CAD Models
DMG4822SSD-13 Part Data Attributes
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DMG4822SSD-13
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMG4822SSD-13
Diodes Incorporated
Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Part Package Code | SOT | |
| Package Description | GREEN, PLASTIC, SOP-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Additional Feature | HIGH RELIABILITY | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.02 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.42 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |