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Transistors / Small Signal Field-Effect Transistors / DMC1229UFDB-13
Datasheets
DMC1229UFDB-13 by: Diodes Incorporated

Small Signal Field-Effect Transistor, 5.6A I(D), 12V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, U-DFN2020-6, 6 PIN

Part Details for DMC1229UFDB-13 by Diodes Incorporated

Results Overview of DMC1229UFDB-13 by Diodes Incorporated

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DMC1229UFDB-13 Information

DMC1229UFDB-13 by Diodes Incorporated is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for DMC1229UFDB-13

Part # Distributor Description Stock Price Buy
DISTI # 31-DMC1229UFDB-13CT-ND
DigiKey MOSFET N/P-CH 12V 5.6A 6UDFN Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 19959
In Stock
  • 1 $0.7400
  • 10 $0.4560
  • 100 $0.2940
  • 500 $0.2241
  • 1,000 $0.1903
  • 2,000 $0.1825
  • 5,000 $0.1620
  • 10,000 $0.1492
  • 20,000 $0.1386
  • 30,000 $0.1381
$0.1381 / $0.7400 Buy Now
DISTI # DMC1229UFDB-13
Avnet Americas Trans MOSFET N/P-CH 12V 5.6A/3.8A 6-Pin UDFN T/R - Tape and Reel (Alt: DMC1229UFDB-13) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 8 Weeks, 0 Days Container: Reel 90000 Factory Stock
  • 10,000 $0.1120
  • 20,000 $0.1099
  • 40,000 $0.1081
  • 60,000 $0.1064
  • 80,000 $0.1046
$0.1046 / $0.1120 Buy Now
DISTI # 621-DMC1229UFDB-13
Mouser Electronics MOSFETs Comp ENH Mode FET 12V Vdss 8V VGss RoHS: Compliant 14778
  • 1 $0.6900
  • 10 $0.4430
  • 100 $0.2940
  • 500 $0.2250
  • 1,000 $0.1780
  • 2,500 $0.1760
  • 5,000 $0.1590
  • 10,000 $0.1430
$0.1430 / $0.6900 Buy Now
Future Electronics N and P-Channel 12 V 29 mOhm Enhancement Mode Mosfet - U-DFN2020-6 RoHS: Compliant pbFree: Yes Min Qty: 10000 Package Multiple: 10000 Lead time: 8 Weeks Container: Reel 0
Reel
  • 10,000 $0.1190
  • 20,000 $0.1180
  • 30,000 $0.1160
$0.1160 / $0.1190 Buy Now
Future Electronics N and P-Channel 12 V 29 mOhm Enhancement Mode Mosfet - U-DFN2020-6 RoHS: Compliant pbFree: Yes Min Qty: 10000 Package Multiple: 10000 Lead time: 8 Weeks Container: Reel 0
Reel
  • 10,000 $0.1190
  • 20,000 $0.1180
  • 30,000 $0.1160
$0.1160 / $0.1190 Buy Now
DISTI # DMC1229UFDB-13
Avnet Silica Trans MOSFET NPCH 12V 56A38A 6Pin UDFN TR (Alt: DMC1229UFDB-13) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 10 Weeks, 0 Days Silica - 10000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 10000 10000
  • 10,000 $0.1967
$0.1967 Buy Now
Vyrian Transistors 12143
RFQ
Win Source Electronics MOSFET N/P-CH 12V U-DFN2020-6 / COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET 158323
  • 295 $0.1721
  • 710 $0.1413
  • 1,100 $0.1368
  • 1,515 $0.1324
  • 1,955 $0.1280
  • 2,615 $0.1148
$0.1148 / $0.1721 Buy Now

Part Details for DMC1229UFDB-13

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DMC1229UFDB-13 Part Data Attributes

Parametric Data
DMC1229UFDB-13 Diodes Incorporated
Buy Now Datasheet
Compare Parts:
DMC1229UFDB-13 Diodes Incorporated Small Signal Field-Effect Transistor, 5.6A I(D), 12V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, U-DFN2020-6, 6 PIN
Select a part to compare:
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer DIODES INC
Package Description U-DFN2020-6, 6 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 8 Weeks
Samacsys Manufacturer Diodes Incorporated
Additional Feature HIGH RELIABILITY
Case Connection DRAIN
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 12 V
Drain Current-Max (ID) 5.6 A
Drain-source On Resistance-Max 0.029 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N6
JESD-609 Code e4
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 2.2 W
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish NICKEL PALLADIUM GOLD
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

DMC1229UFDB-13 Related Parts

DMC1229UFDB-13 Frequently Asked Questions (FAQ)

  • A thermal pad is recommended under the package to improve thermal performance. A minimum of 2oz copper thickness and a thermal relief pattern is recommended to ensure good heat dissipation.

  • Ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C. Also, consider the power dissipation and thermal resistance of the device when designing the system.

  • A 10uF to 22uF X5R or X7R ceramic capacitor is recommended for input decoupling, placed as close to the device as possible.

  • Yes, the DMC1229UFDB-13 is AEC-Q100 qualified and suitable for high-reliability and automotive applications. However, additional testing and validation may be required to meet specific industry standards.

  • Check the input voltage, output load, and PCB layout for any issues. Ensure that the device is operated within the recommended specifications and that the input and output capacitors are properly selected and placed.