Datasheets
DM2864H-250/B by: LSI Corporation

EEPROM, 8KX8, 250ns, Parallel, NMOS, CDIP28

Part Details for DM2864H-250/B by LSI Corporation

Results Overview of DM2864H-250/B by LSI Corporation

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DM2864H-250/B Information

DM2864H-250/B by LSI Corporation is an EEPROM.
EEPROMs are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Available Datasheets

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GA3250-BL Coilcraft Inc Coupled inductor, for MAX 14521E, SMT, RoHS

Part Details for DM2864H-250/B

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DM2864H-250/B Part Data Attributes

DM2864H-250/B LSI Corporation
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DM2864H-250/B LSI Corporation EEPROM, 8KX8, 250ns, Parallel, NMOS, CDIP28
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Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SEEQ TECHNOLOGY INC
Package Description DIP, DIP28,.6
Reach Compliance Code unknown
ECCN Code 3A001.A.2.C
HTS Code 8542.32.00.51
Access Time-Max 250 ns
Additional Feature AUTOMATIC WRITE
Command User Interface NO
Data Polling YES
Endurance 10000 Write/Erase Cycles
JESD-30 Code R-GDIP-T28
JESD-609 Code e0
Memory Density 65536 bit
Memory IC Type EEPROM
Memory Width 8
Number of Functions 1
Number of Terminals 28
Number of Words 8192 words
Number of Words Code 8000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 125 °C
Operating Temperature-Min -55 °C
Organization 8KX8
Output Characteristics 3-STATE
Package Body Material CERAMIC, GLASS-SEALED
Package Code DIP
Package Equivalence Code DIP28,.6
Package Shape RECTANGULAR
Package Style IN-LINE
Parallel/Serial PARALLEL
Programming Voltage 5 V
Qualification Status Not Qualified
Ready/Busy YES
Screening Level 38535Q/M;38534H;883B
Supply Current-Max 0.12 mA
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Supply Voltage-Nom (Vsup) 5 V
Surface Mount NO
Technology NMOS
Temperature Grade MILITARY
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Pitch 2.54 mm
Terminal Position DUAL
Toggle Bit NO
Write Cycle Time-Max (tWC) 2 ms