Datasheets
DIM800DDM12 by: Dynex Semiconductor

Insulated Gate Bipolar Transistor, 800A I(C), 1200V V(BR)CES, N-Channel

Part Details for DIM800DDM12 by Dynex Semiconductor

Overview of DIM800DDM12 by Dynex Semiconductor

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Part Details for DIM800DDM12

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DIM800DDM12 Part Data Attributes:

DIM800DDM12 Dynex Semiconductor
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DIM800DDM12 Dynex Semiconductor Insulated Gate Bipolar Transistor, 800A I(C), 1200V V(BR)CES, N-Channel
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer DYNEX SEMICONDUCTOR LTD
Package Description FLANGE MOUNT, R-XUFM-X10
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 800 A
Collector-Emitter Voltage-Max 1200 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X10
Number of Elements 2
Number of Terminals 10
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for DIM800DDM12

This table gives cross-reference parts and alternative options found for DIM800DDM12. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DIM800DDM12, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FF600R12KF4 Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-10 Infineon Technologies AG DIM800DDM12 vs FF600R12KF4

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