Part Details for DI050N04PT-AQ by Diotec Semiconductor AG
Overview of DI050N04PT-AQ by Diotec Semiconductor AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for DI050N04PT-AQ
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
4878-DI050N04PT-AQCT-ND
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DigiKey | MOSFET, POWERQFN 3X3, 40V, 50A, Min Qty: 1 Lead time: 3 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
4970 In Stock |
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$0.2586 / $0.9400 | Buy Now |
DISTI #
637-DI050N04PT-AQ
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Mouser Electronics | MOSFETs MOSFET, PowerQFN 3x3, 40V, 50A, 150C, N, AEC-Q101 RoHS: Compliant | 0 |
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$0.2540 / $0.9700 | Order Now |
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Onlinecomponents.com | MOSFET - PowerQFN 3x3 - 40V - 50A - N - 37W - AEC-Q101 RoHS: Compliant | 85000 Factory Stock |
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$0.2418 / $0.2628 | Buy Now |
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Master Electronics | MOSFET - PowerQFN 3x3 - 40V - 50A - N - 37W - AEC-Q101 RoHS: Compliant | 85000 Factory Stock |
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$0.2418 / $0.2628 | Buy Now |
Part Details for DI050N04PT-AQ
DI050N04PT-AQ CAD Models
DI050N04PT-AQ Part Data Attributes
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DI050N04PT-AQ
Diotec Semiconductor AG
Buy Now
Datasheet
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DI050N04PT-AQ
Diotec Semiconductor AG
Power Field-Effect Transistor, 50A I(D), 40V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, QFN-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIOTEC SEMICONDUCTOR AG | |
Package Description | QFN-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Diotec | |
Avalanche Energy Rating (Eas) | 103 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 50 A | |
Drain-source On Resistance-Max | 0.0057 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 195 pF | |
JESD-30 Code | S-PDSO-F8 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 25 W | |
Pulsed Drain Current-Max (IDM) | 220 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |