Datasheets
DI035P04PT by: Diotec Semiconductor AG

Power Field-Effect Transistor,

Part Details for DI035P04PT by Diotec Semiconductor AG

Overview of DI035P04PT by Diotec Semiconductor AG

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Applications Space Technology Aerospace and Defense Energy and Power Systems

Price & Stock for DI035P04PT

Part # Distributor Description Stock Price Buy
DISTI # 4878-DI035P04PTCT-ND
DigiKey MOSFET POWERQFN 3X3 P -40V -35A Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 5000
In Stock
  • 1 $0.6200
  • 10 $0.5330
  • 100 $0.3705
  • 500 $0.2893
  • 1,000 $0.2351
  • 2,000 $0.2102
  • 5,000 $0.1995
  • 10,000 $0.1853
  • 25,000 $0.1810
  • 50,000 $0.1764
$0.1764 / $0.6200 Buy Now
DISTI # 637-DI035P04PT
Mouser Electronics MOSFET MOSFET, PowerQFN 3x3, -40V, -35A, 150C, P RoHS: Compliant 0
  • 1 $0.7700
  • 10 $0.6060
  • 100 $0.3630
  • 500 $0.3600
  • 1,000 $0.3480
  • 2,500 $0.3080
  • 5,000 $0.2180
  • 10,000 $0.2000
  • 25,000 $0.1950
$0.1950 / $0.7700 Order Now
Onlinecomponents.com MOSFET - PowerQFN 3x3 - -40V - -35A - P - 25W RoHS: Compliant 0
  • 5,000 $0.1874
  • 10,000 $0.1793
  • 25,000 $0.1743
  • 50,000 $0.1716
  • 100,000 $0.1632
$0.1632 / $0.1874 Buy Now

Part Details for DI035P04PT

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DI035P04PT Part Data Attributes

DI035P04PT Diotec Semiconductor AG
Buy Now Datasheet
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DI035P04PT Diotec Semiconductor AG Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer DIOTEC SEMICONDUCTOR AG
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 2020-08-19
Samacsys Manufacturer Diotec
Avalanche Energy Rating (Eas) 54 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 35 A
Drain-source On Resistance-Max 0.019 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 110 pF
JESD-30 Code S-PDSO-F8
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 40 W
Pulsed Drain Current-Max (IDM) 120 A
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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