Part Details for DF80R12W2H3FB11BOMA1 by Infineon Technologies AG
Overview of DF80R12W2H3FB11BOMA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for DF80R12W2H3FB11BOMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
DF80R12W2H3FB11BOMA1-ND
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DigiKey | MOD DIODE BRIDGE EASY1B-2-1 Lead time: 28 Weeks Container: Tray | Limited Supply - Call |
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Part Details for DF80R12W2H3FB11BOMA1
DF80R12W2H3FB11BOMA1 CAD Models
DF80R12W2H3FB11BOMA1 Part Data Attributes
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DF80R12W2H3FB11BOMA1
Infineon Technologies AG
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Datasheet
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DF80R12W2H3FB11BOMA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Alternate Parts for DF80R12W2H3FB11BOMA1
This table gives cross-reference parts and alternative options found for DF80R12W2H3FB11BOMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DF80R12W2H3FB11BOMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| DF80R12W2H3B11BOMA1 | Insulated Gate Bipolar Transistor | Infineon Technologies AG | DF80R12W2H3FB11BOMA1 vs DF80R12W2H3B11BOMA1 |
| DF80R12W2H3F_B11 | Insulated Gate Bipolar Transistor, | Infineon Technologies AG | DF80R12W2H3FB11BOMA1 vs DF80R12W2H3F_B11 |
| DF80R12W2H3FB11BPSA1 | Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-22 | Infineon Technologies AG | DF80R12W2H3FB11BOMA1 vs DF80R12W2H3FB11BPSA1 |