Datasheets
DF600R12IP4DBOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-8

Part Details for DF600R12IP4DBOSA1 by Infineon Technologies AG

Overview of DF600R12IP4DBOSA1 by Infineon Technologies AG

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Price & Stock for DF600R12IP4DBOSA1

Part # Distributor Description Stock Price Buy
DISTI # 2156-DF600R12IP4DBOSA1-ND
DigiKey IGBT MOD 1200V 600A 3350W Min Qty: 1 Lead time: 14 Weeks Container: Bulk MARKETPLACE PRODUCT 9
In Stock
  • 1 $408.5700
$408.5700 Buy Now
DISTI # DF600R12IP4DBOSA1-ND
DigiKey IGBT MOD 1200V 600A 3350W Min Qty: 1 Lead time: 14 Weeks Container: Tray Temporarily Out of Stock
  • 3 $379.9667
  • 12 $365.6817
  • 27 $354.2537
$354.2537 / $379.9667 Buy Now
DISTI # DF600R12IP4DBOSA1
Avnet Americas IGBT Module N-CH 1200V 600A 10-pin PRIME2-1 - Trays (Alt: DF600R12IP4DBOSA1) RoHS: Compliant Min Qty: 15 Package Multiple: 3 Container: Tray 0
  • 15 $480.8620
  • 21 $466.7190
  • 36 $452.5760
  • 75 $438.4330
  • 150 $424.2900
  • 750 $410.1470
  • 1,500 $396.0040
$396.0040 / $480.8620 Buy Now
Rochester Electronics DFXR12F - IGBT Module RoHS: Compliant Status: Active Min Qty: 1 9
  • 1 $412.5000
  • 25 $404.2500
  • 100 $387.7500
  • 500 $371.2500
  • 1,000 $350.6300
$350.6300 / $412.5000 Buy Now
DISTI # SP000721118
EBV Elektronik IGBT Module N-CH 1200V 600A 10-pin PRIME2-1 (Alt: SP000721118) RoHS: Compliant Min Qty: 3 Package Multiple: 3 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now

Part Details for DF600R12IP4DBOSA1

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DF600R12IP4DBOSA1 Part Data Attributes

DF600R12IP4DBOSA1 Infineon Technologies AG
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DF600R12IP4DBOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description MODULE-8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 600 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 Code R-XUFM-X8
Number of Elements 1
Number of Terminals 8
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1350 ns
Turn-on Time-Nom (ton) 370 ns

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