Datasheets
DDTB113EC-7 by: Diodes Incorporated

Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

Part Details for DDTB113EC-7 by Diodes Incorporated

Overview of DDTB113EC-7 by Diodes Incorporated

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for DDTB113EC-7

Part # Distributor Description Stock Price Buy
Quest Components 500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR 9000
  • 1 $0.1400
  • 572 $0.0630
  • 3,176 $0.0455
$0.0455 / $0.1400 Buy Now

Part Details for DDTB113EC-7

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DDTB113EC-7 Part Data Attributes:

DDTB113EC-7 Diodes Incorporated
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DDTB113EC-7 Diodes Incorporated Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer DIODES INC
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.5 A
Collector-Emitter Voltage-Max 40 V
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 33
JESD-30 Code R-PDSO-G3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type PNP
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 200 MHz

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