Datasheets
DDB6U84N16RRBOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-17

Part Details for DDB6U84N16RRBOSA1 by Infineon Technologies AG

Overview of DDB6U84N16RRBOSA1 by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for DDB6U84N16RRBOSA1

Part # Distributor Description Stock Price Buy
DISTI # DDB6U84N16RRBOSA1-ND
DigiKey IGBT MOD 1200V 50A 350W Lead time: 52 Weeks Container: Bulk Limited Supply - Call
Buy Now
DISTI # DDB6U84N16RRBOSA1
Avnet Americas Diode Rectifier Bridge Single 104A AG-Econo2 Tray - Trays (Alt: DDB6U84N16RRBOSA1) RoHS: Not Compliant Min Qty: 10 Package Multiple: 10 Container: Tray 0
RFQ
DISTI # DDB6U84N16RRBOSA1
Avnet Americas Diode Rectifier Bridge Single 104A AG-Econo2 Tray - Trays (Alt: DDB6U84N16RRBOSA1) RoHS: Not Compliant Min Qty: 10 Package Multiple: 10 Container: Tray 0
RFQ

Part Details for DDB6U84N16RRBOSA1

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DDB6U84N16RRBOSA1 Part Data Attributes:

DDB6U84N16RRBOSA1 Infineon Technologies AG
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DDB6U84N16RRBOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-17
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X17
Pin Count 17
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Date Of Intro 1998-09-05
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 50 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE
JESD-30 Code R-XUFM-X17
Number of Elements 1
Number of Terminals 17
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

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