Part Details for DDB6U75N16W1RBOMA1 by Infineon Technologies AG
Overview of DDB6U75N16W1RBOMA1 by Infineon Technologies AG
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for DDB6U75N16W1RBOMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
49AC0177
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Newark | Diode Module, Bridge, 1.6Kv, 65A, Repetitive Reverse Voltage Vrrm Max:1.6Kv, Forward Current If(Av):65A, Forward Voltage Vf Max:1.1V, Diode Module Configuration:Bridge, Product Range:-, Svhc:No Svhc (27-Jun-2018) Rohs Compliant: Yes |Infineon DDB6U75N16W1RBOMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 96 |
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$73.9900 / $77.7900 | Buy Now |
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DISTI #
448-DDB6U75N16W1RBOMA1-ND
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DigiKey | IGBT MOD 1200V 69A 335W Min Qty: 1 Lead time: 26 Weeks Container: Tray |
11 In Stock |
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$33.5012 / $44.4200 | Buy Now |
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DISTI #
DDB6U75N16W1RBOMA1
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Avnet Americas | Transistor IGBT Module N-CH 1200V 69A ±20V Screw Tray - Trays (Alt: DDB6U75N16W1RBOMA1) RoHS: Not Compliant Min Qty: 24 Package Multiple: 24 Lead time: 20 Weeks, 0 Days Container: Tray | 0 |
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$35.2780 | Buy Now |
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DISTI #
75723985
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Verical | High Performance Bridge Rectifier Min Qty: 1 Package Multiple: 1 Date Code: 2330 | Americas - 24 |
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$59.6250 | Buy Now |
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DISTI #
DDB6U75N16W1RBOMA1
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Avnet Americas | Transistor IGBT Module N-CH 1200V 69A ±20V Screw Tray - Trays (Alt: DDB6U75N16W1RBOMA1) RoHS: Not Compliant Min Qty: 24 Package Multiple: 24 Lead time: 20 Weeks, 0 Days Container: Tray | 0 |
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$35.2780 | Buy Now |
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DISTI #
DDB6U75N16W1RBOMA1
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TME | Module: IGBT, diode/transistor, boost chopper, Urmax: 1.6kV, 335W Min Qty: 1 | 0 |
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$64.5800 / $87.2200 | RFQ |
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Ameya Holding Limited | LOW POWER EASY BRIDGE 1 - 1600V Diode Bridge Modules | 54 |
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RFQ | |
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DISTI #
C1S322001058465
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Chip1Stop | IGBT Modules RoHS: Compliant Container: Tray | 24 |
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$47.7000 | Buy Now |
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DISTI #
SP000546200
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EBV Elektronik | Transistor IGBT Module N-CH 1200V 69A �20V Screw Tray (Alt: SP000546200) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 3 Weeks, 6 Days | EBV - 48 |
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Buy Now | |
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DISTI #
2839343
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element14 Asia-Pacific | DIODE MODULE, BRIDGE, 1.6KV, 65A RoHS: Compliant Min Qty: 1 Container: Each | 96 |
|
$61.2165 / $74.2720 | Buy Now |
Part Details for DDB6U75N16W1RBOMA1
DDB6U75N16W1RBOMA1 CAD Models
DDB6U75N16W1RBOMA1 Part Data Attributes:
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DDB6U75N16W1RBOMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
DDB6U75N16W1RBOMA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 69A I(C), 1200V V(BR)CES, N-Channel, MODULE-27
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | FLANGE MOUNT, R-XUFM-X27 | |
| Pin Count | 27 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 69 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR | |
| JESD-30 Code | R-XUFM-X27 | |
| Number of Elements | 1 | |
| Number of Terminals | 27 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 630 ns | |
| Turn-on Time-Nom (ton) | 137 ns |
Alternate Parts for DDB6U75N16W1RBOMA1
This table gives cross-reference parts and alternative options found for DDB6U75N16W1RBOMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DDB6U75N16W1RBOMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| DDB6U75N16W1R | Insulated Gate Bipolar Transistor, 69A I(C), 1200V V(BR)CES, N-Channel, MODULE-27 | Infineon Technologies AG | DDB6U75N16W1RBOMA1 vs DDB6U75N16W1R |
| DDB6U75N16W1R_B11 | Insulated Gate Bipolar Transistor, 69A I(C), 1200V V(BR)CES, N-Channel, MODULE-27 | Infineon Technologies AG | DDB6U75N16W1RBOMA1 vs DDB6U75N16W1R_B11 |