Part Details for DDB6U75N16W1RB11BOMA1 by Infineon Technologies AG
Overview of DDB6U75N16W1RB11BOMA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for DDB6U75N16W1RB11BOMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
448-DDB6U75N16W1RB11BOMA1-ND
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DigiKey | IGBT MOD 1200V 69A 335W Min Qty: 24 Lead time: 26 Weeks Container: Tray | Temporarily Out of Stock |
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$37.0196 | Buy Now |
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DISTI #
SP000790760
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EBV Elektronik | IGBT Module N-Ch 1600V 75A 9-pin EASY750-1 (Alt: SP000790760) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 3 Weeks, 6 Days | EBV - 0 |
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Buy Now |
Part Details for DDB6U75N16W1RB11BOMA1
DDB6U75N16W1RB11BOMA1 CAD Models
DDB6U75N16W1RB11BOMA1 Part Data Attributes:
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DDB6U75N16W1RB11BOMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
DDB6U75N16W1RB11BOMA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 69A I(C), 1200V V(BR)CES, N-Channel, MODULE-27
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | FLANGE MOUNT, R-XUFM-X11 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 26 Weeks | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 69 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR | |
| JESD-30 Code | R-XUFM-X11 | |
| Number of Elements | 1 | |
| Number of Terminals | 11 | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 630 ns | |
| Turn-on Time-Nom (ton) | 137 ns |
Alternate Parts for DDB6U75N16W1RB11BOMA1
This table gives cross-reference parts and alternative options found for DDB6U75N16W1RB11BOMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DDB6U75N16W1RB11BOMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| DDB6U75N16W1RBOMA1 | Insulated Gate Bipolar Transistor, 69A I(C), 1200V V(BR)CES, N-Channel, MODULE-27 | Infineon Technologies AG | DDB6U75N16W1RB11BOMA1 vs DDB6U75N16W1RBOMA1 |
| DDB6U75N16W1R | Insulated Gate Bipolar Transistor, 69A I(C), 1200V V(BR)CES, N-Channel, MODULE-27 | Infineon Technologies AG | DDB6U75N16W1RB11BOMA1 vs DDB6U75N16W1R |