Part Details for DDB6U25N16VR by Infineon Technologies AG
Overview of DDB6U25N16VR by Infineon Technologies AG
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Applications
Consumer Electronics
Space Technology
Aerospace and Defense
Energy and Power Systems
Renewable Energy
Part Details for DDB6U25N16VR
DDB6U25N16VR CAD Models
DDB6U25N16VR Part Data Attributes:
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DDB6U25N16VR
Infineon Technologies AG
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Datasheet
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DDB6U25N16VR
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, MODULE-9
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | MODULE-9 | |
| Pin Count | 9 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 25 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR | |
| JESD-30 Code | R-XUFM-X9 | |
| Number of Elements | 1 | |
| Number of Terminals | 9 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 620 ns | |
| Turn-on Time-Nom (ton) | 69 ns |