Datasheets
DDB6U134N16RRB11BPSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, MODULE-19

Part Details for DDB6U134N16RRB11BPSA1 by Infineon Technologies AG

Overview of DDB6U134N16RRB11BPSA1 by Infineon Technologies AG

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Price & Stock for DDB6U134N16RRB11BPSA1

Part # Distributor Description Stock Price Buy
DISTI # 2156-DDB6U134N16RRB11BPSA1-ND
DigiKey IGBT MODULE Min Qty: 5 Lead time: 18 Weeks Container: Bulk MARKETPLACE PRODUCT 42
In Stock
  • 5 $72.9600
$72.9600 Buy Now
DISTI # DDB6U134N16RRB11BPSA1-ND
DigiKey IGBT MODULE Min Qty: 5 Lead time: 18 Weeks Container: Tray Temporarily Out of Stock
Buy Now
Rochester Electronics DDB6U134N16 - Bridge Rectifier & AC-Switch ' RoHS: Compliant Status: Active Min Qty: 1 42
  • 1 $73.6600
  • 25 $72.1900
  • 100 $69.2400
  • 500 $66.2900
  • 1,000 $62.6100
$62.6100 / $73.6600 Buy Now
DISTI # SP001242094
EBV Elektronik Diode Rectifier Bridge Single 134A AG-Econo2 Tray (Alt: SP001242094) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 37 Weeks, 0 Days EBV - 0
Buy Now

Part Details for DDB6U134N16RRB11BPSA1

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DDB6U134N16RRB11BPSA1 Part Data Attributes:

DDB6U134N16RRB11BPSA1 Infineon Technologies AG
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DDB6U134N16RRB11BPSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, MODULE-19
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description MODULE-19
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Case Connection ISOLATED
Collector Current-Max (IC) 70 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR
JESD-30 Code R-XUFM-X19
Number of Elements 1
Number of Terminals 19
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON

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