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Transistors / IGBTs / DDB6U134N16RR
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DDB6U134N16RR by:

Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, MODULE-19

Part Details for DDB6U134N16RR by Infineon Technologies AG

Overview of DDB6U134N16RR by Infineon Technologies AG

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Part Details for DDB6U134N16RR

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DDB6U134N16RR Part Data Attributes:

Parametric Data
DDB6U134N16RR Infineon Technologies AG
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DDB6U134N16RR Infineon Technologies AG Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, MODULE-19
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description MODULE-19
Pin Count 19
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 70 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR
JESD-30 Code R-XUFM-X19
Number of Elements 1
Number of Terminals 19
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON

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