Datasheets
DB103G by:
GeneSic Semiconductor Inc
America Semiconductor LLC
Amphenol Corporation
Bytesonic Corporation
CHENMKO Enterprise Co Ltd
Comchip Technology Corporation Ltd
Daco Semiconductor Co Ltd
GeneSic Semiconductor Inc
KEMET Corporation
KOA Corporation
KOA Speer Electronics Inc
Micro Commercial Components
Navitas Semiconductor
RFE International Inc
Shanghai Lunsure Electronic Technology Co Ltd
Silicon Standard Corp
Surge Components Inc
Taitron Components Inc
Taiwan Semiconductor
Thermometrics
Yangzhou Yangjie Electronics Co Ltd
Not Found

200V 1A Silicon Bridge Rectifiers in DB Package

Part Details for DB103G by GeneSic Semiconductor Inc

Results Overview of DB103G by GeneSic Semiconductor Inc

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

DB103G Information

DB103G by GeneSic Semiconductor Inc is a Bridge Rectifier Diode.
Bridge Rectifier Diodes are under the broader part category of Diodes.

A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.

Price & Stock for DB103G

Part # Distributor Description Stock Price Buy
DISTI # 19T8974
Newark Bridge Rectifier, 200V, 1A, Db, No. Of Phases:Single Phase, Repetitive Peak Reverse Voltage:200V, ... Average Forward Current:1A, Bridge Rectifier Case Style:Dip, No. Of Pins:4Pins, Forward Voltage Max:1.1V, Forward Surge Current:30A Rohs Compliant: Yes |Genesic DB103G more RoHS: Compliant Min Qty: 20000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 10,000 $0.1900
$0.1900 Buy Now
DISTI # 1242-1210-ND
DigiKey BRIDGE RECT 1PHASE 200V 1A DB Min Qty: 1 Lead time: 5 Weeks Container: Bulk 417
In Stock
  • 1 $1.3000
  • 10 $0.7670
  • 25 $0.6200
  • 100 $0.4510
  • 250 $0.3650
  • 500 $0.3110
  • 1,000 $0.2650
  • 2,500 $0.2140
$0.2140 / $1.3000 Buy Now
NAC Silicon Bridge Rectifiers - 200V/1A RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 0
  • 5,000 $0.2200
  • 10,000 $0.2100
  • 20,000 $0.2000
$0.2000 / $0.2200 Buy Now

Part Details for DB103G

DB103G CAD Models

There are no models available for this part yet.

Sign in to request this CAD model.

Register or Sign In

DB103G Part Data Attributes

DB103G GeneSic Semiconductor Inc
Buy Now Datasheet
Compare Parts:
DB103G GeneSic Semiconductor Inc 200V 1A Silicon Bridge Rectifiers in DB Package
Select a part to compare:
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer GENESIC SEMICONDUCTOR INC
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Samacsys Manufacturer GeneSiC Semiconductor
Breakdown Voltage-Min 200 V
Configuration BRIDGE, 4 ELEMENTS
Diode Element Material SILICON
Diode Type BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V
JESD-30 Code R-PDIP-T4
Non-rep Pk Forward Current-Max 30 A
Number of Elements 4
Number of Phases 1
Number of Terminals 4
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Output Current-Max 1 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Rep Pk Reverse Voltage-Max 200 V
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

DB103G Related Parts

DB103G Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a large copper area for heat dissipation is recommended. Ensure a minimum of 1 oz copper thickness and a 1-inch square copper plate under the device for optimal heat sinking.

  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan. Monitor the device's junction temperature and adjust the cooling system accordingly. Ensure the device is operated within the recommended temperature range.

  • A gate driver with a high current capability (>1A) and a low output impedance (<10 ohms) is recommended. A bootstrap circuit or a dedicated gate driver IC can be used. Ensure the gate driver is capable of providing a voltage swing of at least 15V to fully enhance the device.

  • Implement overvoltage protection using a TVS diode or a zener diode. Use a current sense resistor and a comparator to monitor the current. Add a fuse or a PPTC resettable fuse to protect against overcurrent. Ensure the protection circuitry is designed to respond quickly to faults.

  • Use a shielded enclosure and ensure the PCB is designed with EMI and RFI in mind. Implement a common-mode choke and a differential-mode filter to reduce emissions. Ensure the device is operated within the recommended frequency range and that the layout is optimized for minimal radiation.