Datasheets
CY7C1480BV33-250BZXC by:

Cache SRAM, 2MX36, 3ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165

Part Details for CY7C1480BV33-250BZXC by Cypress Semiconductor

Overview of CY7C1480BV33-250BZXC by Cypress Semiconductor

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Price & Stock for CY7C1480BV33-250BZXC

Part # Distributor Description Stock Price Buy
Rochester Electronics CY7C1480BV33 - Cache SRAM, 2MX36, 3ns, CMOS, PBGA165 RoHS: Compliant Status: Active Min Qty: 1 50
  • 1 $143.0000
  • 25 $140.1400
  • 100 $134.4200
  • 500 $128.7000
  • 1,000 $121.5500
$121.5500 / $143.0000 Buy Now
Flip Electronics Stock, ship today 641
RFQ

Part Details for CY7C1480BV33-250BZXC

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CY7C1480BV33-250BZXC Part Data Attributes

CY7C1480BV33-250BZXC Cypress Semiconductor
Buy Now Datasheet
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CY7C1480BV33-250BZXC Cypress Semiconductor Cache SRAM, 2MX36, 3ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer CYPRESS SEMICONDUCTOR CORP
Part Package Code BGA
Package Description 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
Pin Count 165
Reach Compliance Code compliant
ECCN Code 3A991.B.2.A
HTS Code 8542.32.00.41
Access Time-Max 3 ns
Additional Feature PIPELINED ARCHITECTURE
Clock Frequency-Max (fCLK) 250 MHz
I/O Type COMMON
JESD-30 Code R-PBGA-B165
JESD-609 Code e1
Length 17 mm
Memory Density 75497472 bit
Memory IC Type CACHE SRAM
Memory Width 36
Moisture Sensitivity Level 3
Number of Functions 1
Number of Terminals 165
Number of Words 2097152 words
Number of Words Code 2000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 2MX36
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LBGA
Package Equivalence Code BGA165,11X15,40
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Seated Height-Max 1.4 mm
Standby Voltage-Min 3.14 V
Supply Current-Max 0.5 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3.135 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 20
Width 15 mm

Alternate Parts for CY7C1480BV33-250BZXC

This table gives cross-reference parts and alternative options found for CY7C1480BV33-250BZXC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1480BV33-250BZXC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CY7C1480BV33-250BZXC Cache SRAM, 2MX36, 3ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Infineon Technologies AG CY7C1480BV33-250BZXC vs CY7C1480BV33-250BZXC
Part Number Description Manufacturer Compare
CY7C1480V33-167AXI Cache SRAM, 2MX36, 3.4ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, MS-026, TQFP-100 Cypress Semiconductor CY7C1480BV33-250BZXC vs CY7C1480V33-167AXI
GS8641V36GF-300T Cache SRAM, 2MX36, 5.5ns, CMOS, PBGA165, 1 MM PITCH, LEAD FREE, BGA-165 GSI Technology CY7C1480BV33-250BZXC vs GS8641V36GF-300T
GS8640FZ36T-6.5IVT ZBT SRAM, 2MX36, 6.5ns, CMOS, PQFP100, TQFP-100 GSI Technology CY7C1480BV33-250BZXC vs GS8640FZ36T-6.5IVT
CY7C1480V25-167AXI Cache SRAM, 2MX36, 3.4ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, MS-026, TQFP-100 Cypress Semiconductor CY7C1480BV33-250BZXC vs CY7C1480V25-167AXI
GS8640E36GT-167T Cache SRAM, 2MX36, 8ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 GSI Technology CY7C1480BV33-250BZXC vs GS8640E36GT-167T
GS8640ZV36GT-200I ZBT SRAM, 2MX36, 7.5ns, CMOS, PQFP100, LEAD FREE, TQFP-100 GSI Technology CY7C1480BV33-250BZXC vs GS8640ZV36GT-200I
K7N643645M-EI160 ZBT SRAM, 2MX36, 3.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165 Samsung Semiconductor CY7C1480BV33-250BZXC vs K7N643645M-EI160
CY7C1470BV25-167AXCT ZBT SRAM, 2MX36, 3.4ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, MS-026, TQFP-100 Infineon Technologies AG CY7C1480BV33-250BZXC vs CY7C1470BV25-167AXCT
GS8642Z36GE-300 ZBT SRAM, 2MX36, 5.5ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FBGA-165 GSI Technology CY7C1480BV33-250BZXC vs GS8642Z36GE-300
GS864536T-150I Cache SRAM, 2MX36, 8.5ns, CMOS, PQFP100, TQFP-100 GSI Technology CY7C1480BV33-250BZXC vs GS864536T-150I

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