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Memory SRAMs CY7C1470BV25-250BZXC

Memory
CY7C1470BV25-250BZXC
Description: ZBT SRAM, 2MX36, 3ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, FBGA-165

Overview of CY7C1470BV25-250BZXC by Cypress Semiconductor

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for CY7C1470BV25-250BZXC by Cypress Semiconductor

Part # Manufacturer Description Stock Price Buy
DISTI # 89T5360
Newark Sync Srams/Tray |Cypress Infineon Technologies CY7C1470BV25-250BZXC RoHS: Not Compliant Min Qty: 525 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
Rochester Electronics CY7C1470BV25 - ZBT SRAM, 2MX36, 3ns PBGA165 RoHS: Compliant Status: Active Min Qty: 1 95
  • 1 $157.8500
  • 25 $154.6900
  • 100 $148.3800
  • 500 $142.0700
  • 1,000 $134.1700
$134.1700 / $157.8500 Buy Now

CAD Models for CY7C1470BV25-250BZXC by Cypress Semiconductor
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Part Data Attributes for CY7C1470BV25-250BZXC by Cypress Semiconductor
Parametric Data

CY7C1470BV25-250BZXC
Cypress Semiconductor
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
CYPRESS SEMICONDUCTOR CORP
Part Package Code
BGA
Package Description
FBGA-165
Pin Count
165
Reach Compliance Code
compliant
ECCN Code
3A991.B.2.A
HTS Code
8542.32.00.41
Access Time-Max
3 ns
Additional Feature
PIPELINED ARCHITECTURE
Clock Frequency-Max (fCLK)
250 MHz
I/O Type
COMMON
JESD-30 Code
R-PBGA-B165
JESD-609 Code
e1
Length
17 mm
Memory Density
75497472 bit
Memory IC Type
ZBT SRAM
Memory Width
36
Moisture Sensitivity Level
3
Number of Functions
1
Number of Terminals
165
Number of Words
2097152 words
Number of Words Code
2000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
2MX36
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
LBGA
Package Equivalence Code
BGA165,11X15,40
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE
Parallel/Serial
PARALLEL
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Seated Height-Max
1.4 mm
Standby Voltage-Min
2.38 V
Supply Current-Max
0.45 mA
Supply Voltage-Max (Vsup)
2.625 V
Supply Voltage-Min (Vsup)
2.375 V
Supply Voltage-Nom (Vsup)
2.5 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form
BALL
Terminal Pitch
1 mm
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
20
Width
15 mm
Want to compare parts?
  1. CY7C1470BV25-250BZXC
    Cypress Semiconductor
    ZBT SRAM, 2MX36, 3ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, FBGA-165
    VS

Alternate Parts for CY7C1470BV25-250BZXC

This table gives cross-reference parts and alternative options found for CY7C1470BV25-250BZXC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1470BV25-250BZXC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
CY7C1470BV25-250BZXC ZBT SRAM, 2MX36, 3ns, CMOS, PBGA165, FBGA-165 Infineon Technologies AG CY7C1470BV25-250BZXC vs CY7C1470BV25-250BZXC
CY7C1470BV25-250BZC ZBT SRAM, 2MX36, 3ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, FBGA-165 Cypress Semiconductor CY7C1470BV25-250BZXC vs CY7C1470BV25-250BZC
Part Number Description Manufacturer Compare
CY7C1470V33-250BZXI ZBT SRAM, 2MX36, 3ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, FBGA-165 Cypress Semiconductor CY7C1470BV25-250BZXC vs CY7C1470V33-250BZXI
GS8640ZV36T-200 ZBT SRAM, 2MX36, 7.5ns, CMOS, PQFP100, TQFP-100 GSI Technology CY7C1470BV25-250BZXC vs GS8640ZV36T-200
GS864236GE-300T Cache SRAM, 2MX36, 5.5ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FBGA-165 GSI Technology CY7C1470BV25-250BZXC vs GS864236GE-300T
GS8640Z36T-300 ZBT SRAM, 2MX36, 5.5ns, CMOS, PQFP100, TQFP-100 GSI Technology CY7C1470BV25-250BZXC vs GS8640Z36T-300
CY7C1471V25-100AC ZBT SRAM, 2MX36, 8.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 Cypress Semiconductor CY7C1470BV25-250BZXC vs CY7C1471V25-100AC
GS864536GT-133T Cache SRAM, 2MX36, 8.5ns, CMOS, PQFP100, LEAD FREE, TQFP-100 GSI Technology CY7C1470BV25-250BZXC vs GS864536GT-133T
CY7C1480BV33-200AXC Cache SRAM, 2MX36, 3ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, MS-026, TQFP-100 Infineon Technologies AG CY7C1470BV25-250BZXC vs CY7C1480BV33-200AXC
GS8642V36F-300T Cache SRAM, 2MX36, 5.5ns, CMOS, PBGA165, 1 MM PITCH, BGA-165 GSI Technology CY7C1470BV25-250BZXC vs GS8642V36F-300T
CY7C1471V33-117BZC ZBT SRAM, 2MX36, 8.5ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, FBGA-165 Cypress Semiconductor CY7C1470BV25-250BZXC vs CY7C1471V33-117BZC
K7N643631M-FC160 ZBT SRAM, 2MX36, 3.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor CY7C1470BV25-250BZXC vs K7N643631M-FC160

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