Datasheets
CY7C1420BV18-250BZC by:

DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165

Part Details for CY7C1420BV18-250BZC by Cypress Semiconductor

Overview of CY7C1420BV18-250BZC by Cypress Semiconductor

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage

Price & Stock for CY7C1420BV18-250BZC

Part # Distributor Description Stock Price Buy
Bristol Electronics   8
RFQ
Quest Components   6
  • 1 $150.0000
  • 3 $142.5000
  • 5 $135.0000
$135.0000 / $150.0000 Buy Now
Rochester Electronics DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165 ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 505
RFQ

Part Details for CY7C1420BV18-250BZC

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CY7C1420BV18-250BZC Part Data Attributes

CY7C1420BV18-250BZC Cypress Semiconductor
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CY7C1420BV18-250BZC Cypress Semiconductor DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer CYPRESS SEMICONDUCTOR CORP
Part Package Code BGA
Package Description 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
Pin Count 165
Reach Compliance Code not_compliant
ECCN Code 3A991.B.2.A
HTS Code 8542.32.00.41
Access Time-Max 0.45 ns
Additional Feature PIPELINED ARCHITECTURE
Clock Frequency-Max (fCLK) 250 MHz
I/O Type COMMON
JESD-30 Code R-PBGA-B165
JESD-609 Code e0
Length 17 mm
Memory Density 37748736 bit
Memory IC Type DDR SRAM
Memory Width 36
Moisture Sensitivity Level 3
Number of Functions 1
Number of Terminals 165
Number of Words 1048576 words
Number of Words Code 1000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 1MX36
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LBGA
Package Equivalence Code BGA165,11X15,40
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Seated Height-Max 1.4 mm
Standby Current-Max 0.35 A
Standby Voltage-Min 1.7 V
Supply Current-Max 0.825 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 15 mm

Alternate Parts for CY7C1420BV18-250BZC

This table gives cross-reference parts and alternative options found for CY7C1420BV18-250BZC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1420BV18-250BZC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
GS8342T36AGE-250T DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology CY7C1420BV18-250BZC vs GS8342T36AGE-250T
GS8342T36AGE-167I DDR SRAM, 1MX36, 0.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology CY7C1420BV18-250BZC vs GS8342T36AGE-167I
CY7C1420BV18-167BZC DDR SRAM, 1MX36, 0.5ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1420BV18-250BZC vs CY7C1420BV18-167BZC
CY7C1420KV18-250BZXC DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Infineon Technologies AG CY7C1420BV18-250BZC vs CY7C1420KV18-250BZXC
K7I323682M-FC200 DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor CY7C1420BV18-250BZC vs K7I323682M-FC200
CY7C1420KV18-250BZXC DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1420BV18-250BZC vs CY7C1420KV18-250BZXC
CY7C1420BV18-250BZXI DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1420BV18-250BZC vs CY7C1420BV18-250BZXI
GS8342T36AE-167I DDR SRAM, 1MX36, 0.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 GSI Technology CY7C1420BV18-250BZC vs GS8342T36AE-167I
CY7C1420BV18-250BZXC DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1420BV18-250BZC vs CY7C1420BV18-250BZXC
CY7C1420KV18-250BZCT Standard SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Infineon Technologies AG CY7C1420BV18-250BZC vs CY7C1420KV18-250BZCT
Part Number Description Manufacturer Compare
K7I323682M-FC20 DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor CY7C1420BV18-250BZC vs K7I323682M-FC20
CY7C1420KV18-250BZXC DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1420BV18-250BZC vs CY7C1420KV18-250BZXC
CY7C1420KV18-250BZXI DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1420BV18-250BZC vs CY7C1420KV18-250BZXI
K7I323682M-FC25 DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor CY7C1420BV18-250BZC vs K7I323682M-FC25
CY7C1420KV18-250BZC DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1420BV18-250BZC vs CY7C1420KV18-250BZC
GS8342T36AE-200I DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 GSI Technology CY7C1420BV18-250BZC vs GS8342T36AE-200I
GS8342T36AE-250IT DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 GSI Technology CY7C1420BV18-250BZC vs GS8342T36AE-250IT
CY7C1420BV18-167BZXI DDR SRAM, 1MX36, 0.5ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1420BV18-250BZC vs CY7C1420BV18-167BZXI
K7I323682M-FC200 DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor CY7C1420BV18-250BZC vs K7I323682M-FC200
CY7C1420AV18-200BZXI DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1420BV18-250BZC vs CY7C1420AV18-200BZXI

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