Datasheets
CY7C1412KV18-250BZC by:

QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165

Part Details for CY7C1412KV18-250BZC by Cypress Semiconductor

Overview of CY7C1412KV18-250BZC by Cypress Semiconductor

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Applications Education and Research Computing and Data Storage Energy and Power Systems

Price & Stock for CY7C1412KV18-250BZC

Part # Distributor Description Stock Price Buy
DISTI # 25T6926
Newark Sync Srams/Tray |Cypress Infineon Technologies CY7C1412KV18-250BZC Min Qty: 680 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 2832-CY7C1412KV18-250BZC-ND
DigiKey IC SRAM 36MBIT PAR 165FBGA Min Qty: 20 Container: Tray MARKETPLACE PRODUCT 863
In Stock
  • 20 $34.5300
$34.5300 Buy Now
Bristol Electronics   9
RFQ
Quest Components   211
  • 1 $77.5200
  • 82 $60.0780
  • 167 $58.1400
$58.1400 / $77.5200 Buy Now
Quest Components   24
  • 1 $77.5200
  • 8 $69.7680
  • 15 $65.8920
$65.8920 / $77.5200 Buy Now
Rochester Electronics CY7C1412KV18 - QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165 RoHS: Not Compliant Status: Active Min Qty: 1 474
  • 1 $43.2800
  • 25 $42.4200
  • 100 $40.6900
  • 500 $38.9600
  • 1,000 $36.7900
$36.7900 / $43.2800 Buy Now
Chip1Cloud IC SRAM 36MBIT 250MHZ 165FBGA 9000
RFQ
Flip Electronics Stock, ship today 1245
  • 1 $25.9000
$25.9000 RFQ

Part Details for CY7C1412KV18-250BZC

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CY7C1412KV18-250BZC Part Data Attributes

CY7C1412KV18-250BZC Cypress Semiconductor
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CY7C1412KV18-250BZC Cypress Semiconductor QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer CYPRESS SEMICONDUCTOR CORP
Part Package Code BGA
Package Description 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
Pin Count 165
Reach Compliance Code compliant
ECCN Code 3A991.B.2.A
HTS Code 8542.32.00.41
Access Time-Max 0.45 ns
Additional Feature PIPELINED ARCHITECTURE
Clock Frequency-Max (fCLK) 250 MHz
I/O Type SEPARATE
JESD-30 Code R-PBGA-B165
JESD-609 Code e0
Length 15 mm
Memory Density 37748736 bit
Memory IC Type QDR SRAM
Memory Width 18
Moisture Sensitivity Level 3
Number of Functions 1
Number of Terminals 165
Number of Words 2097152 words
Number of Words Code 2000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 2MX18
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LBGA
Package Equivalence Code BGA165,11X15,40
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Seated Height-Max 1.4 mm
Standby Current-Max 0.26 A
Standby Voltage-Min 1.7 V
Supply Current-Max 0.61 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 20
Width 13 mm

Alternate Parts for CY7C1412KV18-250BZC

This table gives cross-reference parts and alternative options found for CY7C1412KV18-250BZC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1412KV18-250BZC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CY7C1412KV18-250BZCT Standard SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Infineon Technologies AG CY7C1412KV18-250BZC vs CY7C1412KV18-250BZCT
CY7C1412BV18-250BZC QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1412KV18-250BZC vs CY7C1412BV18-250BZC
K7R321882M-FC250 QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor CY7C1412KV18-250BZC vs K7R321882M-FC250
CY7C1414BV18-200BZXI QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1412KV18-250BZC vs CY7C1414BV18-200BZXI
CY7C1412KV18-250BZI QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, FBGA-165 Infineon Technologies AG CY7C1412KV18-250BZC vs CY7C1412KV18-250BZI
CY7C1412BV18-250BZXI QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1412KV18-250BZC vs CY7C1412BV18-250BZXI
CY7C1412BV18-250BZI QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1412KV18-250BZC vs CY7C1412BV18-250BZI
CY7C1412KV18-250BZXC QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, FBGA-165 Infineon Technologies AG CY7C1412KV18-250BZC vs CY7C1412KV18-250BZXC
CY7C1412KV18-250BZCT Standard SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1412KV18-250BZC vs CY7C1412KV18-250BZCT
CY7C1414BV18-200BZXC QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1412KV18-250BZC vs CY7C1414BV18-200BZXC
Part Number Description Manufacturer Compare
CY7C1414BV18-250BZXI QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1412KV18-250BZC vs CY7C1414BV18-250BZXI
CY7C1414KV18-250BZXC QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1412KV18-250BZC vs CY7C1414KV18-250BZXC
CY7C1414KV18-250BZXI QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1412KV18-250BZC vs CY7C1414KV18-250BZXI
UPD44325362F5-E40-EQ2 QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, PLASTIC, FBGA-165 NEC Electronics Group CY7C1412KV18-250BZC vs UPD44325362F5-E40-EQ2
CY7C1414KV18-250BZC QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1412KV18-250BZC vs CY7C1414KV18-250BZC
K7S3218T4C-FI450 QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor CY7C1412KV18-250BZC vs K7S3218T4C-FI450
K7S3218U4C-EC330 QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165 Samsung Semiconductor CY7C1412KV18-250BZC vs K7S3218U4C-EC330
CY7C1412BV18-250BZXI QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1412KV18-250BZC vs CY7C1412BV18-250BZXI
CY7C1412KV18-250BZXI QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, FBGA-165 Infineon Technologies AG CY7C1412KV18-250BZC vs CY7C1412KV18-250BZXI
CY7C1412KV18-250BZCT Standard SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1412KV18-250BZC vs CY7C1412KV18-250BZCT

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