Datasheets
CY7C1318KV18-300BZXC by:

DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, FBGA-165

Part Details for CY7C1318KV18-300BZXC by Infineon Technologies AG

Overview of CY7C1318KV18-300BZXC by Infineon Technologies AG

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Price & Stock for CY7C1318KV18-300BZXC

Part # Distributor Description Stock Price Buy
DISTI # 2832-CY7C1318KV18-300BZXC-ND
DigiKey IC SRAM 18MBIT PARALLEL 165FBGA Min Qty: 25 Lead time: 11 Weeks Container: Tray MARKETPLACE PRODUCT 136
In Stock
  • 25 $24.8500
$24.8500 Buy Now
DISTI # CY7C1318KV18-300BZXC-ND
DigiKey IC SRAM 18MBIT PARALLEL 165FBGA Min Qty: 25 Lead time: 11 Weeks Container: Tray Limited Supply - Call
  • 680 $28.2842
$28.2842 Buy Now
DISTI # CY7C1318KV18-300BZ
Avnet Americas SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin FBGA Tray (Alt: CY7C1318KV18-300BZ) RoHS: Compliant Min Qty: 27 Package Multiple: 1 Lead time: 0 Weeks, 2 Days 0
  • 27 $27.9450
  • 30 $27.1998
  • 60 $26.0820
  • 140 $25.3368
  • 270 $24.5916
$24.5916 / $27.9450 Buy Now
DISTI # CY7C1318KV18-300BZ
Avnet Americas SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin FBGA Tray - Trays (Alt: CY7C1318KV18-300BZ) RoHS: Compliant Min Qty: 680 Package Multiple: 680 Lead time: 11 Weeks, 0 Days Container: Tray 0
  • 680 $28.3955
  • 952 $27.7550
  • 1,632 $27.1145
  • 3,400 $26.4740
  • 6,800 $25.8335
$25.8335 / $28.3955 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 680 Package Multiple: 680 Lead time: 11 Weeks 0
  • 680 $26.6900
$26.6900 Buy Now

Part Details for CY7C1318KV18-300BZXC

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CY7C1318KV18-300BZXC Part Data Attributes

CY7C1318KV18-300BZXC Infineon Technologies AG
Buy Now Datasheet
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CY7C1318KV18-300BZXC Infineon Technologies AG DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, FBGA-165
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FBGA-165
Reach Compliance Code compliant
Factory Lead Time 11 Weeks
Access Time-Max 0.45 ns
Additional Feature PIPELINED ARCHITECTURE
Clock Frequency-Max (fCLK) 300 MHz
I/O Type COMMON
JESD-30 Code R-PBGA-B165
JESD-609 Code e1
Length 15 mm
Memory Density 18874368 bit
Memory IC Type DDR SRAM
Memory Width 18
Moisture Sensitivity Level 3
Number of Functions 1
Number of Terminals 165
Number of Words 1048576 words
Number of Words Code 1000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 1MX18
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LBGA
Package Equivalence Code BGA165,11X15,40
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Seated Height-Max 1.4 mm
Standby Current-Max 0.26 A
Standby Voltage-Min 1.7 V
Supply Current-Max 0.43 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Width 13 mm

Alternate Parts for CY7C1318KV18-300BZXC

This table gives cross-reference parts and alternative options found for CY7C1318KV18-300BZXC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1318KV18-300BZXC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CY7C1318CV18-300BZC DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1318KV18-300BZXC vs CY7C1318CV18-300BZC
CY7C1318CV18-300BZXI DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1318KV18-300BZXC vs CY7C1318CV18-300BZXI
CY7C1318BV18-300BZI DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1318KV18-300BZXC vs CY7C1318BV18-300BZI
CY7C1318KV18-300BZXC DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, FBGA-165 Cypress Semiconductor CY7C1318KV18-300BZXC vs CY7C1318KV18-300BZXC
CY7C1318CV18-300BZXC DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1318KV18-300BZXC vs CY7C1318CV18-300BZXC
CY7C1318BV18-300BZC DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1318KV18-300BZXC vs CY7C1318BV18-300BZC
CY7C1318CV18-300BZI DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1318KV18-300BZXC vs CY7C1318CV18-300BZI
Part Number Description Manufacturer Compare
CY7C1318BV18-300BZI DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1318KV18-300BZXC vs CY7C1318BV18-300BZI
CY7C1318CV18-300BZXC DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1318KV18-300BZXC vs CY7C1318CV18-300BZXC
CY7C1318CV18-300BZC DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1318KV18-300BZXC vs CY7C1318CV18-300BZC
CY7C1318CV18-300BZXI DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1318KV18-300BZXC vs CY7C1318CV18-300BZXI
CY7C1318KV18-300BZXC DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, FBGA-165 Cypress Semiconductor CY7C1318KV18-300BZXC vs CY7C1318KV18-300BZXC
CY7C1318CV18-300BZI DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1318KV18-300BZXC vs CY7C1318CV18-300BZI
CY7C1318BV18-300BZC DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1318KV18-300BZXC vs CY7C1318BV18-300BZC

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