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-20-V, P channel NexFET™ power MOSFET, dual Common Source WLP 1.5 mm x 1.5 mm, 27 mOhm, gate ESD pro 9-DSBGA -55 to 150
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
296-40008-1-ND
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DigiKey | MOSFET 2P-CH 3.9A 9DSBGA Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
4407 In Stock |
|
$0.1875 / $0.8100 | Buy Now |
DISTI #
595-CSD75207W15
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Mouser Electronics | MOSFETs Dual P-CH NexFET Pwr MOSFET RoHS: Compliant | 10603 |
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$0.1870 / $0.5100 | Buy Now |
DISTI #
J56:1989_07199702
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Arrow Electronics | Trans MOSFET P-CH 3.9A 9-Pin DSBGA T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks Date Code: 2141 | Europe - 3000 |
|
$0.1794 / $0.2112 | Buy Now |
DISTI #
V72:2272_07248896
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Arrow Electronics | Trans MOSFET P-CH 3.9A 9-Pin DSBGA T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2134 Container: Cut Strips | Americas - 354 |
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$0.2135 / $0.2556 | Buy Now |
DISTI #
61612596
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Verical | Trans MOSFET P-CH 3.9A 9-Pin DSBGA T/R RoHS: Compliant Min Qty: 27 Package Multiple: 1 Date Code: 2134 | Americas - 354 |
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$0.2135 | Buy Now |
DISTI #
C1S746203682044
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Chip1Stop | Trans MOSFET P-CH 9-Pin DSBGA T/R RoHS: Compliant pbFree: Yes Container: Cut Tape | 2 |
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$0.1740 | Buy Now |
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CSD75207W15
Texas Instruments
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Datasheet
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Compare Parts:
CSD75207W15
Texas Instruments
-20-V, P channel NexFET™ power MOSFET, dual Common Source WLP 1.5 mm x 1.5 mm, 27 mOhm, gate ESD pro 9-DSBGA -55 to 150
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | , S-XBGA-B9 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.40 | |
Samacsys Manufacturer | Texas Instruments | |
Configuration | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | -3.9 A | |
Drain-source On Resistance-Max | 0.162 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 13.5 pF | |
JESD-30 Code | S-XBGA-B9 | |
JESD-609 Code | e1 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 9 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | SQUARE | |
Package Style | GRID ARRAY | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation Ambient-Max | 0.7 W | |
Power Dissipation-Max (Abs) | 0.7 W | |
Surface Mount | YES | |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
Terminal Form | BALL | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |