Datasheets
CSD25401Q3 by: Texas Instruments

P-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150

Part Details for CSD25401Q3 by Texas Instruments

Results Overview of CSD25401Q3 by Texas Instruments

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CSD25401Q3 Information

CSD25401Q3 by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for CSD25401Q3

Part # Distributor Description Stock Price Buy
Bristol Electronics   4700
RFQ
Bristol Electronics   41
RFQ
Quest Components 14A, 20V, 0.0182OHM, P-CHANNEL, SI, POWER, MOSFET 1086
  • 1 $1.6500
  • 62 $0.8250
  • 243 $0.6600
$0.6600 / $1.6500 Buy Now
Quest Components 14A, 20V, 0.0182OHM, P-CHANNEL, SI, POWER, MOSFET 685
  • 1 $2.2220
  • 46 $1.1110
  • 181 $0.8888
$0.8888 / $2.2220 Buy Now
Quest Components 14A, 20V, 0.0182OHM, P-CHANNEL, SI, POWER, MOSFET 160
  • 1 $1.6500
  • 16 $0.9900
  • 62 $0.8250
$0.8250 / $1.6500 Buy Now
Quest Components 14A, 20V, 0.0182OHM, P-CHANNEL, SI, POWER, MOSFET 15
  • 1 $0.9900
  • 6 $0.8250
$0.8250 / $0.9900 Buy Now
Ameya Holding Limited MOSFET P-CH 20V 60A 8-SON 761
Buy Now RFQ
ComSIT USA P-CHANNEL NEXFET POWER MOSFET Power Field-Effect Transistor, 14A I(D), 20V, 0.0182ohm, 1-Element, P-... Channel, Silicon, Metal-oxide Semiconductor FET more ECCN: EAR99 RoHS: Compliant Stock DE - 2430
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for CSD25401Q3

CSD25401Q3 CAD Models

CSD25401Q3 Part Data Attributes

CSD25401Q3 Texas Instruments
Buy Now Datasheet
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CSD25401Q3 Texas Instruments P-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150
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Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer TEXAS INSTRUMENTS INC
Package Description SON-8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Texas Instruments
Additional Feature AVALANCHE RATED
Case Connection SOURCE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.0182 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2.8 W
Pulsed Drain Current-Max (IDM) 82 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for CSD25401Q3

This table gives cross-reference parts and alternative options found for CSD25401Q3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD25401Q3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
CSD25402Q3A Texas Instruments $0.5914 -20-V, P channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 8.9 mOhm 8-VSONP -55 to 150 CSD25401Q3 vs CSD25402Q3A

Resources and Additional Insights for CSD25401Q3

Reference Designs related to CSD25401Q3

CSD25401Q3 Related Parts

CSD25401Q3 Frequently Asked Questions (FAQ)

  • A good PCB layout for the CSD25401Q3 involves keeping the input and output traces short and away from each other, using a solid ground plane, and placing decoupling capacitors close to the device. TI provides a recommended layout in the datasheet and application notes.

  • To ensure proper biasing, follow the recommended biasing scheme in the datasheet, which includes setting the input common-mode voltage to VCC/2, and using a voltage divider to set the output common-mode voltage to VCC/2. Additionally, ensure that the input and output resistors are properly matched.

  • The maximum operating frequency of the CSD25401Q3 is 250 MHz, but this can vary depending on the specific application and PCB layout. It's recommended to consult the datasheet and application notes for more information on frequency response and bandwidth.

  • The CSD25401Q3 has built-in ESD protection, but it's still important to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is handled in a static-free environment.

  • The recommended power-up sequence for the CSD25401Q3 is to apply VCC first, followed by the input signal. This ensures that the device is properly biased and configured before the input signal is applied.