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-12-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 35 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
CSD23285F5T by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
296-44809-1-ND
|
DigiKey | MOSFET P-CH 12V 5.4A 3PICOSTAR Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1424 In Stock |
|
$0.3638 / $1.4200 | Buy Now |
DISTI #
595-CSD23285F5T
|
Mouser Electronics | MOSFETs -12-V P channel Nex FET power MOSFET s A 595-CSD23285F5 RoHS: Compliant | 1074 |
|
$0.3630 / $1.3900 | Buy Now |
DISTI #
V72:2272_16547072
|
Arrow Electronics | Trans MOSFET P-CH 12V 5.4A 3-Pin PicoStar T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2142 Container: Cut Strips | Americas - 72 |
|
$0.1614 / $0.3691 | Buy Now |
DISTI #
59831155
|
Verical | Trans MOSFET P-CH 12V 5.4A 3-Pin PicoStar T/R RoHS: Compliant Min Qty: 16 Package Multiple: 1 Date Code: 2142 | Americas - 72 |
|
$0.1614 / $0.1641 | Buy Now |
DISTI #
CSD23285F5T
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TME | Transistor: P-MOSFET, unipolar, -12V, -5.4A, Idm: -31A, 1.4W Min Qty: 1 | 0 |
|
$0.5190 / $0.8340 | RFQ |
|
Vyrian | Transistors | 491 |
|
RFQ |
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CSD23285F5T
Texas Instruments
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Datasheet
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Compare Parts:
CSD23285F5T
Texas Instruments
-12-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 35 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
Select a part to compare: |
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Date Of Intro | 2016-09-04 | |
Samacsys Manufacturer | Texas Instruments | |
Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
DS Breakdown Voltage-Min | 12 V | |
Drain Current-Max (ID) | -3.3 A | |
Drain-source On Resistance-Max | 0.13 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 48 pF | |
JESD-30 Code | R-XBCC-N3 | |
JESD-609 Code | e4 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 1.4 W | |
Pulsed Drain Current-Max (IDM) | 31 A | |
Surface Mount | YES | |
Terminal Finish | Nickel/Gold (Ni/Au) | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for CSD23285F5T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD23285F5T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
CSD23285F5 | Texas Instruments | $0.1669 | -12-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 35 mOhm, gate ESD protection 3-PICOSTAR -55 to 150 | CSD23285F5T vs CSD23285F5 |
A good PCB layout for the CSD23285F5T involves keeping the input and output traces short and away from each other, using a solid ground plane, and placing decoupling capacitors close to the device. TI provides a recommended PCB layout in the datasheet and application notes.
To ensure proper biasing, follow the recommended voltage and current settings in the datasheet. Typically, this involves setting the input voltage (VIN) to 1.8V to 5.5V, and the output voltage (VOUT) to the desired level. Also, ensure the input and output capacitors are properly sized and placed.
The CSD23285F5T has a thermal shutdown feature that activates when the junction temperature exceeds 150°C. To prevent overheating, ensure good airflow, use a heat sink if necessary, and follow the recommended PCB layout and thermal design guidelines in the datasheet.
To troubleshoot issues, start by verifying the input voltage, output voltage, and current settings. Check for proper PCB layout, decoupling, and component selection. Use an oscilloscope to monitor the output voltage and current. Consult the datasheet and application notes for troubleshooting guides and FAQs.
Yes, the CSD23285F5T is qualified for automotive and high-reliability applications. It meets the AEC-Q100 standard for automotive reliability and is designed to operate in harsh environments. However, ensure you follow the recommended design and testing guidelines for your specific application.