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100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 9.5 mOhm 8-VSONP -55 to 150
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
CSD19533Q5AT by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
296-44472-1-ND
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DigiKey | MOSFET N-CH 100V 100A 8VSON Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
513 In Stock |
|
$0.6750 / $1.9900 | Buy Now |
DISTI #
595-CSD19533Q5AT
|
Mouser Electronics | MOSFETs 100V 7.8mOhm SON5x6 N-ch NexFET A 595-CSD19533Q5A RoHS: Compliant | 682 |
|
$0.6750 / $2.1500 | Buy Now |
DISTI #
CSD19533Q5AT
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TME | Transistor: N-MOSFET, unipolar, 100V, 100A, 96W, VSONP8, 5x6mm Min Qty: 1 | 228 |
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$0.9000 / $1.6400 | Buy Now |
|
NexGen Digital | 2 |
|
RFQ | ||
|
LCSC | 100V 75A 7.8m10V13A 3.2W 2.8V 1 N-channel VSONP-8(5x6) MOSFETs ROHS | 25 |
|
$2.0829 / $2.2022 | Buy Now |
|
Win Source Electronics | MOSFET N-CH 100V 100A VSONP / Trans MOSFET N-CH Si 100V 100A 8-Pin VSONP EP T/R | 25000 |
|
$2.5524 / $3.8285 | Buy Now |
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CSD19533Q5AT
Texas Instruments
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Datasheet
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Compare Parts:
CSD19533Q5AT
Texas Instruments
100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 9.5 mOhm 8-VSONP -55 to 150
Select a part to compare: |
Pbfree Code | Yes | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | VSONP-8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 106 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0111 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 12.5 pF | |
JESD-30 Code | R-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 96 W | |
Pulsed Drain Current-Max (IDM) | 231 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for CSD19533Q5AT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD19533Q5AT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
CSD19533Q5A | Texas Instruments | $1.1911 | 100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 9.5 mOhm 8-VSONP -55 to 150 | CSD19533Q5AT vs CSD19533Q5A |