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Part Details for CSD19533Q5AT by Texas Instruments
Overview of CSD19533Q5AT by Texas Instruments
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for CSD19533Q5AT
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
296-44472-1-ND
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DigiKey | MOSFET N-CH 100V 100A 8VSON Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
745 In Stock |
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$0.6750 / $1.9500 | Buy Now |
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DISTI #
595-CSD19533Q5AT
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Mouser Electronics | MOSFETs 100V, 7.8mOhm SON5x6 N-ch NexFET RoHS: Compliant | 752 |
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$0.6740 / $1.9500 | Buy Now |
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DISTI #
CSD19533Q5AT
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TME | Transistor: N-MOSFET, unipolar, 100V, 100A, 96W, VSONP8, 5x6mm Min Qty: 1 | 238 |
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$0.9500 / $1.7300 | Buy Now |
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Ameya Holding Limited | Transistor: N-MOSFET, unipolar, 100V, 100A, 96W, VSONP8, 5x6mm | 26174 |
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RFQ | |
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LCSC | 100V 100A 9.4m13A10V 3.4V250uA 1 N-Channel VSONP-8(5x6) MOSFETs ROHS | 25 |
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$2.1226 / $2.2454 | Buy Now |
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Win Source Electronics | MOSFET N-CH 100V 100A VSONP / Trans MOSFET N-CH Si 100V 100A 8-Pin VSONP EP T/R | 124700 |
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$0.7166 / $1.0749 | Buy Now |
Part Details for CSD19533Q5AT
CSD19533Q5AT CAD Models
CSD19533Q5AT Part Data Attributes
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CSD19533Q5AT
Texas Instruments
Buy Now
Datasheet
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Compare Parts:
CSD19533Q5AT
Texas Instruments
100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 9.5 mOhm 8-VSONP -55 to 150
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| Pbfree Code | Yes | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
| Package Description | VSONP-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Texas Instruments | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 106 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0111 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 12.5 pF | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 96 W | |
| Pulsed Drain Current-Max (IDM) | 231 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |