Datasheets
CSD19533Q5AT by: Texas Instruments

100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 9.5 mOhm 8-VSONP -55 to 150

Part Details for CSD19533Q5AT by Texas Instruments

Results Overview of CSD19533Q5AT by Texas Instruments

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CSD19533Q5AT Information

CSD19533Q5AT by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for CSD19533Q5AT

Part # Distributor Description Stock Price Buy
DISTI # 296-44472-1-ND
DigiKey MOSFET N-CH 100V 100A 8VSON Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 513
In Stock
  • 1 $1.9900
  • 10 $1.3570
  • 100 $0.9608
  • 250 $0.8538
  • 500 $0.7517
  • 750 $0.7206
  • 1,250 $0.7088
  • 1,750 $0.7064
  • 2,500 $0.7024
  • 6,250 $0.6750
$0.6750 / $1.9900 Buy Now
DISTI # 595-CSD19533Q5AT
Mouser Electronics MOSFETs 100V 7.8mOhm SON5x6 N-ch NexFET A 595-CSD19533Q5A RoHS: Compliant 682
  • 1 $2.1500
  • 10 $1.4300
  • 100 $1.0600
  • 250 $0.8370
  • 500 $0.7370
  • 1,000 $0.6760
  • 2,500 $0.6750
$0.6750 / $2.1500 Buy Now
DISTI # CSD19533Q5AT
TME Transistor: N-MOSFET, unipolar, 100V, 100A, 96W, VSONP8, 5x6mm Min Qty: 1 228
  • 1 $1.6400
  • 5 $1.4100
  • 25 $1.2300
  • 100 $1.0500
  • 250 $0.9000
$0.9000 / $1.6400 Buy Now
NexGen Digital   2
RFQ
LCSC 100V 75A 7.8m10V13A 3.2W 2.8V 1 N-channel VSONP-8(5x6) MOSFETs ROHS 25
  • 1 $2.2022
  • 10 $2.1502
  • 30 $2.1165
  • 100 $2.0829
$2.0829 / $2.2022 Buy Now
Win Source Electronics MOSFET N-CH 100V 100A VSONP / Trans MOSFET N-CH Si 100V 100A 8-Pin VSONP EP T/R 25000
  • 14 $3.8285
  • 32 $3.1414
  • 50 $3.0432
  • 68 $2.9450
  • 88 $2.8469
  • 118 $2.5524
$2.5524 / $3.8285 Buy Now

Part Details for CSD19533Q5AT

CSD19533Q5AT CAD Models

CSD19533Q5AT Part Data Attributes

CSD19533Q5AT Texas Instruments
Buy Now Datasheet
Compare Parts:
CSD19533Q5AT Texas Instruments 100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 9.5 mOhm 8-VSONP -55 to 150
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Pbfree Code Yes
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer TEXAS INSTRUMENTS INC
Package Description VSONP-8
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Texas Instruments
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 106 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0111 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 12.5 pF
JESD-30 Code R-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 96 W
Pulsed Drain Current-Max (IDM) 231 A
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for CSD19533Q5AT

This table gives cross-reference parts and alternative options found for CSD19533Q5AT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD19533Q5AT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
CSD19533Q5A Texas Instruments $1.1911 100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 9.5 mOhm 8-VSONP -55 to 150 CSD19533Q5AT vs CSD19533Q5A

CSD19533Q5AT Related Parts

CSD19533Q5AT Frequently Asked Questions (FAQ)

  • A good PCB layout for the CSD19533Q5AT involves keeping the high-current paths short and wide, using multiple vias to connect the drain pad to the thermal pad, and placing the device close to the power source to minimize inductance.

  • Proper thermal management involves attaching a heat sink to the thermal pad, using thermal interface material to fill gaps, and ensuring good airflow around the device. The maximum junction temperature (TJ) should not exceed 150°C.

  • When selecting a gate driver, consider the driver's output current capability, rise and fall times, and voltage rating. The driver should be able to provide a high current pulse to quickly charge the gate capacitance, and its output voltage should be compatible with the CSD19533Q5AT's gate-source voltage rating.

  • To protect the CSD19533Q5AT, use a voltage regulator or overvoltage protection circuit to limit the voltage, and consider adding overcurrent protection devices such as fuses or current sensors. Additionally, ensure the device is operated within its safe operating area (SOA).

  • The CSD19533Q5AT has a higher current rating and lower on-resistance (RDS(on)) compared to similar devices. It also has a different package type and pinout, so be sure to check the datasheet for specific details.