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100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 9.5 mOhm 8-VSONP -55 to 150
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
296-44472-1-ND
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DigiKey | MOSFET N-CH 100V 100A 8VSON Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
745 In Stock |
|
$0.6750 / $1.9500 | Buy Now |
DISTI #
595-CSD19533Q5AT
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Mouser Electronics | MOSFETs 100V, 7.8mOhm SON5x6 N-ch NexFET RoHS: Compliant | 752 |
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$0.6740 / $1.9500 | Buy Now |
DISTI #
CSD19533Q5AT
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TME | Transistor: N-MOSFET, unipolar, 100V, 100A, 96W, VSONP8, 5x6mm Min Qty: 1 | 238 |
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$0.9500 / $1.7300 | Buy Now |
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Ameya Holding Limited | Transistor: N-MOSFET, unipolar, 100V, 100A, 96W, VSONP8, 5x6mm | 26174 |
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RFQ | |
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LCSC | 100V 100A 9.4m13A10V 3.4V250uA 1 N-Channel VSONP-8(5x6) MOSFETs ROHS | 25 |
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$2.1226 / $2.2454 | Buy Now |
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Win Source Electronics | MOSFET N-CH 100V 100A VSONP / Trans MOSFET N-CH Si 100V 100A 8-Pin VSONP EP T/R | 124700 |
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$0.7166 / $1.0749 | Buy Now |
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CSD19533Q5AT
Texas Instruments
Buy Now
Datasheet
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CSD19533Q5AT
Texas Instruments
100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 9.5 mOhm 8-VSONP -55 to 150
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Pbfree Code | Yes | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | VSONP-8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 106 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0111 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 12.5 pF | |
JESD-30 Code | R-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 96 W | |
Pulsed Drain Current-Max (IDM) | 231 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |