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Transistors / Power Field-Effect Transistors / CSD19532KTTT
Datasheets
CSD19532KTTT by: Texas Instruments

100-V, N channel NexFET™ power MOSFET, single D2PAK, 5.6 mOhm 2-DDPAK/TO-263 -55 to 175

Part Details for CSD19532KTTT by Texas Instruments

Results Overview of CSD19532KTTT by Texas Instruments

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

CSD19532KTTT Information

CSD19532KTTT by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for CSD19532KTTT

Part # Distributor Description Stock Price Buy
DISTI # 296-43211-1-ND
DigiKey MOSFET N-CH 100V 200A DDPAK Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 8705
In Stock
  • 1 $2.1100
  • 10 $1.7140
  • 50 $1.3668
  • 100 $1.3056
  • 150 $1.3005
  • 250 $1.2862
$1.2862 / $2.1100 Buy Now
DISTI # 595-CSD19532KTTT
Mouser Electronics MOSFETs 100V N-channel NexF ET Pwr MOSFET A 595-CSD19532KTT 18221
  • 1 $2.3200
  • 10 $1.8400
  • 50 $1.3700
  • 100 $1.3000
  • 250 $1.2800
$1.2800 / $2.3200 Buy Now
DISTI # V72:2272_13893300
Arrow Electronics Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2240 Container: Cut Strips Americas - 9
  • 1 $1.3200
$1.3200 Buy Now
DISTI # 65740686
Verical Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R Min Qty: 5 Package Multiple: 1 Date Code: 2240 Americas - 9
  • 5 $1.3200
$1.3200 Buy Now
Bristol Electronics   100
RFQ
Bristol Electronics   Min Qty: 2 32
  • 2 $2.7000
  • 9 $2.0250
  • 26 $1.6875
$1.6875 / $2.7000 Buy Now
Quest Components   25
  • 1 $3.6000
  • 2 $2.7000
  • 10 $2.2500
$2.2500 / $3.6000 Buy Now
DISTI # CSD19532KTTT
TME Transistor: N-MOSFET, unipolar, 100V, 200A, Idm: 400A, 250W, D2PAK Min Qty: 1 294
  • 1 $2.6500
  • 3 $2.4300
  • 10 $2.0500
  • 50 $1.6600
$1.6600 / $2.6500 Buy Now
LCSC 100V 136A 250W 4.6m10V90A 2.6V 1 N-channel TO-263-3 MOSFETs ROHS 6
  • 1 $3.7356
  • 10 $3.6499
  • 30 $3.5933
  • 100 $3.5367
$3.5367 / $3.7356 Buy Now
Vyrian Transistors 11263
RFQ

Part Details for CSD19532KTTT

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CSD19532KTTT Part Data Attributes

Parametric Data
CSD19532KTTT Texas Instruments
Buy Now Datasheet
Compare Parts:
CSD19532KTTT Texas Instruments 100-V, N channel NexFET™ power MOSFET, single D2PAK, 5.6 mOhm 2-DDPAK/TO-263 -55 to 175
Select a part to compare:
Pbfree Code Yes
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer TEXAS INSTRUMENTS INC
Package Description TO-263, D2PAK-3/2
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Texas Instruments
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 259 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 200 A
Drain-source On Resistance-Max 0.0066 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 18 pF
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for CSD19532KTTT

This table gives cross-reference parts and alternative options found for CSD19532KTTT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD19532KTTT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
CSD19532KTT Texas Instruments $1.3324 100-V, N channel NexFET™ power MOSFET, single D2PAK, 5.6 mOhm 2-DDPAK/TO-263 -55 to 175 CSD19532KTTT vs CSD19532KTT
IXTQ200N10T Littelfuse Inc $5.1239 Power Field-Effect Transistor, CSD19532KTTT vs IXTQ200N10T
IXFP180N10T2 Littelfuse Inc $5.0699 Power Field-Effect Transistor, CSD19532KTTT vs IXFP180N10T2
IXTH200N10T Littelfuse Inc $5.8503 Power Field-Effect Transistor, CSD19532KTTT vs IXTH200N10T
IXTH200N10T IXYS Corporation $5.9009 Power Field-Effect Transistor, 200A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 CSD19532KTTT vs IXTH200N10T
IXTV200N10TS IXYS Corporation Check for Price Power Field-Effect Transistor, 200A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220SMD, 3 PIN CSD19532KTTT vs IXTV200N10TS
IXFA180N10T2 IXYS Corporation $3.2678 Power Field-Effect Transistor, 180A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-263AA, 3 PIN CSD19532KTTT vs IXFA180N10T2

CSD19532KTTT Related Parts

CSD19532KTTT Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 2 oz copper thickness and a thermal relief pattern under the device.

  • Ensure the input voltage (VIN) is within the recommended range (4.5V to 60V). Use a high-quality, low-ESR capacitor (e.g., X5R or X7R) for decoupling, and follow the recommended pin connections and layout guidelines.

  • The maximum allowed current is 30A, but it's recommended to derate the current based on the ambient temperature and PCB thermal design. Refer to the thermal derating curve in the datasheet.

  • Use a TVS diode or a zener diode for overvoltage protection. Implement overcurrent protection using a fuse or a current-sensing resistor with a comparator or a dedicated overcurrent protection IC.

  • The recommended operating frequency range is up to 1 MHz, but it can be used at higher frequencies with proper PCB design and layout considerations.