Part Details for CSD18512Q5BT by Texas Instruments
Overview of CSD18512Q5BT by Texas Instruments
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for CSD18512Q5BT
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
296-CSD18512Q5BTCT-ND
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DigiKey | MOSFET N-CH 40V 211A 8VSON Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
350 In Stock |
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$0.8775 / $2.3900 | Buy Now |
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DISTI #
595-CSD18512Q5BT
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Mouser Electronics | MOSFETs 40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.6 mOhm 8-VSON-CLIP -55 to 150 RoHS: Compliant | 400 |
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$0.8770 / $2.3900 | Buy Now |
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Rochester Electronics | CSD18512Q5B 40V, N Channel NexFET MOSFET, single SON5x6, 1.6mOhm RoHS: Not Compliant Status: Active Min Qty: 1 | 61 |
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RFQ | |
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DISTI #
CSD18512Q5BT
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TME | Transistor: N-MOSFET, unipolar, 40V, 100A, Idm: 400A, 139W Min Qty: 1 | 0 |
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$1.2300 / $1.8400 | RFQ |
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Chip-Germany GmbH | RoHS: Not Compliant | 16 |
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RFQ |
Part Details for CSD18512Q5BT
CSD18512Q5BT CAD Models
CSD18512Q5BT Part Data Attributes
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CSD18512Q5BT
Texas Instruments
Buy Now
Datasheet
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Compare Parts:
CSD18512Q5BT
Texas Instruments
40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.6 mOhm 8-VSON-CLIP -55 to 150
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| Pbfree Code | Yes | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
| Package Description | VSON-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Date Of Intro | 2016-12-12 | |
| Samacsys Manufacturer | Texas Instruments | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 205 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 211 A | |
| Drain-source On Resistance-Max | 0.0023 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 333 pF | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 139 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for CSD18512Q5BT
This table gives cross-reference parts and alternative options found for CSD18512Q5BT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD18512Q5BT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC018N04LSG | Power Field-Effect Transistor, 30A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | CSD18512Q5BT vs BSC018N04LSG |