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40-V, N channel NexFET™ power MOSFET, single D2PAK, 1.7 mOhm 2-DDPAK/TO-263 -55 to 175
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
66AH9441
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Newark | Mosfet, N-Ch, 40V, 274A, To-263, Transistor Polarity:N Channel, Continuous Drain Current Id:274A, Drain Source Voltage Vds:40V, On Resistance Rds(On):0.0014Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.7V, Power Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD18510KTTT Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 13 |
|
$3.0800 / $3.2100 | Buy Now |
DISTI #
296-45229-1-ND
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DigiKey | MOSFET N-CH 40V 274A DDPAK Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
318 In Stock |
|
$1.1816 / $2.7200 | Buy Now |
DISTI #
595-CSD18510KTTT
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Mouser Electronics | MOSFET 40V N-Channel NexFET Power MOSFET RoHS: Compliant | 887 |
|
$1.1800 / $2.7200 | Buy Now |
DISTI #
CSD18510KTTT
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TME | Transistor: N-MOSFET, unipolar, 40V, 200A, Idm: 400A, 250W, D2PAK Min Qty: 1 | 115 |
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$1.7600 / $2.3300 | Buy Now |
|
Ameya Holding Limited | Transistor: N-MOSFET, unipolar, 40V, 200A, 250W, D2PAK | 16660 |
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RFQ |
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CSD18510KTTT
Texas Instruments
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CSD18510KTTT
Texas Instruments
40-V, N channel NexFET™ power MOSFET, single D2PAK, 1.7 mOhm 2-DDPAK/TO-263 -55 to 175
|
Pbfree Code | Yes | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Date Of Intro | 2016-12-17 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 328 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 200 A | |
Drain-source On Resistance-Max | 0.0026 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 551 pF | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |