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40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.3 mOhm 8-VSONP -55 to 150
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
52AH3716
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Newark | Mosfet, N-Ch, 40V, 100A, Vson-8, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:40V, On Resistance Rds(On):0.0034Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD18503Q5A Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$1.3300 / $1.7600 | Buy Now |
DISTI #
296-30571-1-ND
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DigiKey | MOSFET N-CH 40V 19A/100A 8VSON Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
9684 In Stock |
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$0.5761 / $1.5300 | Buy Now |
DISTI #
595-CSD18503Q5A
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Mouser Electronics | MOSFET 40V N-Channel NexFET Power MOSFET RoHS: Compliant | 13344 |
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$0.5760 / $1.5200 | Buy Now |
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Bristol Electronics | Min Qty: 2 | 126 |
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$1.1250 / $3.0000 | Buy Now |
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Bristol Electronics | 1595 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 19A I(D), 40V, 0.0062OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 100 |
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$1.4000 / $4.0000 | Buy Now |
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Ameya Holding Limited | MOSFET N-CH 40V 8SON | 6525 |
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RFQ | |
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NexGen Digital | 2 |
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RFQ | ||
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Sense Electronic Company Limited | VSONP8 | 977 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 40V 8SON | 59365 |
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$1.4560 / $2.1830 | Buy Now |
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CSD18503Q5A
Texas Instruments
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Datasheet
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CSD18503Q5A
Texas Instruments
40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.3 mOhm 8-VSONP -55 to 150
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Pbfree Code | Yes | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | SMALL OUTLINE, R-PDSO-F5 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 157 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0062 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 16 pF | |
JESD-30 Code | R-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 120 W | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |