Part Details for CSD17581Q3AT by Texas Instruments
Overview of CSD17581Q3AT by Texas Instruments
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for CSD17581Q3AT
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
26AJ5569
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Newark | Mosfet, N-Ch, 30V, 60A, Vson-8, Transistor Polarity:N Channel, Continuous Drain Current Id:60A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.0032Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.3V, Power Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD17581Q3AT Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$0.9160 / $1.1000 | Buy Now |
DISTI #
296-45025-1-ND
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DigiKey | MOSFET N-CH 30V 60A 8VSON Min Qty: 1 Lead time: 6 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
11150 In Stock |
|
$0.3762 / $1.0000 | Buy Now |
DISTI #
595-CSD17581Q3AT
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Mouser Electronics | MOSFET 30V N-Channel NexFET RoHS: Compliant | 342 |
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$0.3760 / $1.0000 | Buy Now |
DISTI #
CSD17581Q3AT
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TME | Transistor: N-MOSFET, unipolar, 30V, 60A, 63W, VSONP8, 3.3x3.3mm Min Qty: 1 | 2171 |
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$0.5600 / $0.9300 | Buy Now |
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Ameya Holding Limited | Transistor: N-MOSFET, unipolar, 30V, 60A, 63W, VSONP8, 3.3x3.3mm | 89875 |
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RFQ | |
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LCSC | PDFN-8(3x3.2) MOSFETs ROHS | 252 |
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$0.6048 / $1.0504 | Buy Now |
Part Details for CSD17581Q3AT
CSD17581Q3AT CAD Models
CSD17581Q3AT Part Data Attributes:
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CSD17581Q3AT
Texas Instruments
Buy Now
Datasheet
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CSD17581Q3AT
Texas Instruments
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 4.7 mOhm 8-VSONP -55 to 150
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | VSONP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Date Of Intro | 2016-10-15 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 76 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 60 A | |
Drain-source On Resistance-Max | 0.0047 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 195 pF | |
JESD-30 Code | R-PDSO-F5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 63 W | |
Pulsed Drain Current-Max (IDM) | 154 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |