Part Details for CSD17313Q2Q1T by Texas Instruments
Overview of CSD17313Q2Q1T by Texas Instruments
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Medical Imaging
Automotive
Robotics and Drones
Price & Stock for CSD17313Q2Q1T
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
CSD17313Q2Q1T
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TME | Transistor: N-MOSFET, unipolar, 30V, 5A, Idm: 57A, 17W, WSON6 Min Qty: 1 | 0 |
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$0.7300 / $1.0900 | RFQ |
Part Details for CSD17313Q2Q1T
CSD17313Q2Q1T CAD Models
CSD17313Q2Q1T Part Data Attributes:
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CSD17313Q2Q1T
Texas Instruments
Buy Now
Datasheet
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Compare Parts:
CSD17313Q2Q1T
Texas Instruments
Automotive 30-V N channel NexFET™ power MOSFET 6-WSON 0 to 0
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | WSON-6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Date Of Intro | 2016-03-24 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 18 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 5 A | |
Drain-source On Resistance-Max | 0.042 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 17 pF | |
JESD-30 Code | S-PDSO-N6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 57 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for CSD17313Q2Q1T
This table gives cross-reference parts and alternative options found for CSD17313Q2Q1T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD17313Q2Q1T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
CSD17313Q2Q1 | Automotive 30-V N channel NexFET™ power MOSFET 6-WSON -55 to 150 | Texas Instruments | CSD17313Q2Q1T vs CSD17313Q2Q1 |
CSD17313Q2T | 30-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 32 mOhm 6-WSON -55 to 150 | Texas Instruments | CSD17313Q2Q1T vs CSD17313Q2T |