Part Details for CPV363M4K by Vishay Intertechnologies
Overview of CPV363M4K by Vishay Intertechnologies
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for CPV363M4K
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
07B755
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Newark | Igbt Module, 600V, 11A, Sip, Continuous Collector Current:11A, Collector Emitter Saturation Voltage:2.1V, Power Dissipation:36W, Operating Temperature Max:150°C, Igbt Termination:Solder, Collector Emitter Voltage Max:600V Rohs Compliant: No |Vishay CPV363M4K RoHS: Not Compliant Min Qty: 84 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for CPV363M4K
CPV363M4K CAD Models
CPV363M4K Part Data Attributes
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CPV363M4K
Vishay Intertechnologies
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Datasheet
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CPV363M4K
Vishay Intertechnologies
Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, IMS-2, 13 PIN
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | IMS-2, 13 PIN | |
Pin Count | 13 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | ULTRA FAST SOFT RECOVERY | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 11 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-PSFM-T13 | |
Number of Elements | 6 | |
Number of Terminals | 13 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 36 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 405 ns | |
Turn-on Time-Nom (ton) | 78 ns |
Alternate Parts for CPV363M4K
This table gives cross-reference parts and alternative options found for CPV363M4K. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CPV363M4K, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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CPV363M4K | Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel | International Rectifier | CPV363M4K vs CPV363M4K |