-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Single N-Channel Power MOSFET, 35V, 6A, 37mΩ, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
CPH6443-TL-WOSCT-ND
|
DigiKey | MOSFET N-CH 35V 6A 6CPH Min Qty: 1 Lead time: 22 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
2 In Stock |
|
$0.5600 | Buy Now |
DISTI #
V79:2366_24951039
|
Arrow Electronics | Trans MOSFET N-CH Si 35V 6A 6-Pin CPH T/R Min Qty: 1 Package Multiple: 1 Date Code: 1615 | Americas - 32 |
|
$0.5404 | Buy Now |
|
Bristol Electronics | 797 |
|
RFQ | ||
|
Quest Components | 637 |
|
$0.2755 / $0.5510 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
CPH6443-TL-W
onsemi
Buy Now
Datasheet
|
Compare Parts:
CPH6443-TL-W
onsemi
Single N-Channel Power MOSFET, 35V, 6A, 37mΩ, 3000-REEL
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Manufacturer Package Code | 318BD | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Additional Feature | ESD PROTECTED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 35 V | |
Drain Current-Max (ID) | 6 A | |
Drain-source On Resistance-Max | 0.037 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e6 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.6 W | |
Pulsed Drain Current-Max (IDM) | 24 A | |
Surface Mount | YES | |
Terminal Finish | TIN BISMUTH | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |