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Part Details for CPH3356-TL-H by onsemi
Results Overview of CPH3356-TL-H by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Medical Imaging
Automotive
Robotics and Drones
CPH3356-TL-H Information
CPH3356-TL-H by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for CPH3356-TL-H
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
CPH3356-TL-H
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Avnet Silica | Trans MOSFET PCH 20V 25A 3Pin CPH TR (Alt: CPH3356-TL-H) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Part Details for CPH3356-TL-H
CPH3356-TL-H CAD Models
CPH3356-TL-H Part Data Attributes
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CPH3356-TL-H
onsemi
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Datasheet
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Compare Parts:
CPH3356-TL-H
onsemi
Single P-Channel Power MOSFET, -20V, -2.5A, 137mΩ, CPH3, 3000-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | CPH3 | |
| Package Description | SC-59, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | 318BA | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 2.5 A | |
| Drain-source On Resistance-Max | 0.137 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e6 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Bismuth (Sn/Bi) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |