Datasheets
CMT01N60N251 by: Champion Microelectronic Corp

Transistor

Part Details for CMT01N60N251 by Champion Microelectronic Corp

Results Overview of CMT01N60N251 by Champion Microelectronic Corp

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CMT01N60N251 Information

CMT01N60N251 by Champion Microelectronic Corp is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for CMT01N60N251

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CMT01N60N251 Part Data Attributes

CMT01N60N251 Champion Microelectronic Corp
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Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer CHAMPION MICROELECTRONIC CORP
Package Description GRID ARRAY, R-PSIP-T3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 20 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 1 A
Drain-source On Resistance-Max 8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style GRID ARRAY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 50 W
Pulsed Drain Current-Max (IDM) 9 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON