Part Details for CMT01N60N251 by Champion Microelectronic Corp
Results Overview of CMT01N60N251 by Champion Microelectronic Corp
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CMT01N60N251 Information
CMT01N60N251 by Champion Microelectronic Corp is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for CMT01N60N251
CMT01N60N251 CAD Models
CMT01N60N251 Part Data Attributes
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CMT01N60N251
Champion Microelectronic Corp
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Datasheet
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CMT01N60N251
Champion Microelectronic Corp
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Part Life Cycle Code | Contact Manufacturer | |
Ihs Manufacturer | CHAMPION MICROELECTRONIC CORP | |
Package Description | GRID ARRAY, R-PSIP-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 20 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 1 A | |
Drain-source On Resistance-Max | 8 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-251 | |
JESD-30 Code | R-PSIP-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 50 W | |
Pulsed Drain Current-Max (IDM) | 9 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |