Part Details for CMS12P03Q8-HF by Comchip Technology Corporation Ltd
Overview of CMS12P03Q8-HF by Comchip Technology Corporation Ltd
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Part Details for CMS12P03Q8-HF
CMS12P03Q8-HF CAD Models
CMS12P03Q8-HF Part Data Attributes:
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CMS12P03Q8-HF
Comchip Technology Corporation Ltd
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CMS12P03Q8-HF
Comchip Technology Corporation Ltd
Power Field-Effect Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | COMCHIP TECHNOLOGY CO LTD | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 231 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 0.015 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 262 pF | |
JESD-30 Code | R-PDSO-G8 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 3 W | |
Pulsed Drain Current-Max (IDM) | 48 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |