Part Details for CMH150DY-24NFH by Mitsubishi Electric
Overview of CMH150DY-24NFH by Mitsubishi Electric
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Renewable Energy
Entertainment and Gaming
Price & Stock for CMH150DY-24NFH
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
917-CMH150DY-24NFH
|
Mouser Electronics | Discrete Semiconductor Modules 1200V 150A SiC 30kHz to 60kHz | 0 |
|
$347.1100 / $360.6800 | Order Now |
Part Details for CMH150DY-24NFH
CMH150DY-24NFH CAD Models
CMH150DY-24NFH Part Data Attributes
|
CMH150DY-24NFH
Mitsubishi Electric
Buy Now
Datasheet
|
Compare Parts:
CMH150DY-24NFH
Mitsubishi Electric
Insulated Gate Bipolar Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
Package Description | MODULE-7 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 150 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 150 ns | |
Gate-Emitter Thr Voltage-Max | 7.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-PUFM-X7 | |
Number of Elements | 2 | |
Number of Terminals | 7 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 960 W | |
Reference Standard | UL RECOGNIZED | |
Rise Time-Max (tr) | 80 ns | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON CARBIDE | |
Turn-off Time-Max (toff) | 550 ns | |
Turn-on Time-Max (ton) | 230 ns | |
VCEsat-Max | 6.5 V |