Part Details for CM75E3U-24H by Mitsubishi Electric
Results Overview of CM75E3U-24H by Mitsubishi Electric
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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CM75E3U-24H Information
CM75E3U-24H by Mitsubishi Electric is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for CM75E3U-24H
CM75E3U-24H CAD Models
CM75E3U-24H Part Data Attributes
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CM75E3U-24H
Mitsubishi Electric
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Datasheet
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CM75E3U-24H
Mitsubishi Electric
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel,
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
Package Description | FLANGE MOUNT, R-XUFM-X5 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | SUPER FAST RECOVERY | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 75 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X5 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 600 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 600 ns | |
Turn-on Time-Nom (ton) | 300 ns | |
VCEsat-Max | 3.7 V |
Alternate Parts for CM75E3U-24H
This table gives cross-reference parts and alternative options found for CM75E3U-24H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CM75E3U-24H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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BSM75GAL120DN2 | Siemens | Check for Price | Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel | CM75E3U-24H vs BSM75GAL120DN2 |
CM75E3U-24H | Powerex Power Semiconductors | Check for Price | Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel | CM75E3U-24H vs CM75E3U-24H |
APT85GR120JD60 | Microchip Technology Inc | $40.9137 | Insulated Gate Bipolar Transistor, 116A I(C), 1200V V(BR)CES, N-Channel | CM75E3U-24H vs APT85GR120JD60 |
BSM75GAL120DN2 | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, HALF BRIDGE GAL 1, 7 PIN | CM75E3U-24H vs BSM75GAL120DN2 |