There are no models available for this part yet.
Overview of CM600HU-12H by Mitsubishi Electric
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Industrial Automation
Electronic Manufacturing
Price & Stock for CM600HU-12H by Mitsubishi Electric
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
09B2241
|
Newark | Igbt, Module, 600V, 600A, Continuous Collector Current:600A, Collector Emitter Saturation Voltage:2.4V, Power Dissipation:1.56Kw, Operating Temperature Max:150°C, Igbt Termination:Tab, Collector Emitter Voltage Max:600V Rohs Compliant: No |Mitsubishi Electric CM600HU-12H RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now |
CAD Models for CM600HU-12H by Mitsubishi Electric
Part Data Attributes for CM600HU-12H by Mitsubishi Electric
|
|
---|---|
Pbfree Code
|
No
|
Rohs Code
|
No
|
Part Life Cycle Code
|
Not Recommended
|
Ihs Manufacturer
|
MITSUBISHI ELECTRIC CORP
|
Package Description
|
FLANGE MOUNT, R-XUFM-X4
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
Additional Feature
|
SUPER FAST RECOVERY
|
Case Connection
|
ISOLATED
|
Collector Current-Max (IC)
|
600 A
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Collector-Emitter Voltage-Max
|
600 V
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Configuration
|
SINGLE WITH BUILT-IN DIODE
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Gate-Emitter Voltage-Max
|
20 V
|
JESD-30 Code
|
R-XUFM-X4
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Number of Elements
|
1
|
Number of Terminals
|
4
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
UNSPECIFIED
|
Package Shape
|
RECTANGULAR
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Package Style
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
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Polarity/Channel Type
|
N-CHANNEL
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Power Dissipation-Max (Abs)
|
1560 W
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Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Form
|
UNSPECIFIED
|
Terminal Position
|
UPPER
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Application
|
MOTOR CONTROL
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Transistor Element Material
|
SILICON
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Turn-off Time-Nom (toff)
|
650 ns
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Turn-on Time-Nom (ton)
|
900 ns
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VCEsat-Max
|
3 V
|
Alternate Parts for CM600HU-12H
This table gives cross-reference parts and alternative options found for CM600HU-12H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CM600HU-12H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
MG100J2YS40 | TRANSISTOR 100 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | CM600HU-12H vs MG100J2YS40 |
MG400J1US11 | TRANSISTOR 400 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | CM600HU-12H vs MG400J1US11 |
1MBI300L-060 | Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, M116, 5 PIN | Fuji Electric Co Ltd | CM600HU-12H vs 1MBI300L-060 |
MG100J2YS1 | TRANSISTOR 100 A, 600 V, N-CHANNEL IGBT, 2-94C3A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | CM600HU-12H vs MG100J2YS1 |
BSM75GB60DLCHOSA1 | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | CM600HU-12H vs BSM75GB60DLCHOSA1 |
CM600HA-12H | Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel | Powerex Power Semiconductors | CM600HU-12H vs CM600HA-12H |
2MBI150N-060 | Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, M233, 7 PIN | Fuji Electric Co Ltd | CM600HU-12H vs 2MBI150N-060 |
CM600HA-12H | Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, | Mitsubishi Electric | CM600HU-12H vs CM600HA-12H |
MG400J1US21 | TRANSISTOR 400 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | CM600HU-12H vs MG400J1US21 |
BSM300GB60DLC | Insulated Gate Bipolar Transistor, 375A I(C), 600V V(BR)CES, N-Channel, | Infineon Technologies AG | CM600HU-12H vs BSM300GB60DLC |
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