CM600HU-12H
Description: Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel,

Overview of CM600HU-12H by Mitsubishi Electric

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Where used in Applications: Industrial Automation Electronic Manufacturing

Price & Stock for CM600HU-12H by Mitsubishi Electric

Part # Manufacturer Description Stock Price Buy
DISTI # 09B2241
Newark Igbt, Module, 600V, 600A, Continuous Collector Current:600A, Collector Emitter Saturation Voltage:2.4V, Power Dissipation:1.56Kw, Operating Temperature Max:150°C, Igbt Termination:Tab, Collector Emitter Voltage Max:600V Rohs Compliant: No |Mitsubishi Electric CM600HU-12H RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk 0
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Part Data Attributes for CM600HU-12H by Mitsubishi Electric

CM600HU-12H
Mitsubishi Electric
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Not Recommended
Ihs Manufacturer
MITSUBISHI ELECTRIC CORP
Package Description
FLANGE MOUNT, R-XUFM-X4
Reach Compliance Code
unknown
ECCN Code
EAR99
Additional Feature
SUPER FAST RECOVERY
Case Connection
ISOLATED
Collector Current-Max (IC)
600 A
Collector-Emitter Voltage-Max
600 V
Configuration
SINGLE WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max
20 V
JESD-30 Code
R-XUFM-X4
Number of Elements
1
Number of Terminals
4
Operating Temperature-Max
150 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
1560 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
MOTOR CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
650 ns
Turn-on Time-Nom (ton)
900 ns
VCEsat-Max
3 V
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    Mitsubishi Electric
    Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel,
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Alternate Parts for CM600HU-12H

This table gives cross-reference parts and alternative options found for CM600HU-12H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CM600HU-12H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MG100J2YS40 TRANSISTOR 100 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components CM600HU-12H vs MG100J2YS40
MG400J1US11 TRANSISTOR 400 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components CM600HU-12H vs MG400J1US11
1MBI300L-060 Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, M116, 5 PIN Fuji Electric Co Ltd CM600HU-12H vs 1MBI300L-060
MG100J2YS1 TRANSISTOR 100 A, 600 V, N-CHANNEL IGBT, 2-94C3A, 7 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components CM600HU-12H vs MG100J2YS1
BSM75GB60DLCHOSA1 Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG CM600HU-12H vs BSM75GB60DLCHOSA1
CM600HA-12H Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel Powerex Power Semiconductors CM600HU-12H vs CM600HA-12H
2MBI150N-060 Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, M233, 7 PIN Fuji Electric Co Ltd CM600HU-12H vs 2MBI150N-060
CM600HA-12H Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, Mitsubishi Electric CM600HU-12H vs CM600HA-12H
MG400J1US21 TRANSISTOR 400 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components CM600HU-12H vs MG400J1US21
BSM300GB60DLC Insulated Gate Bipolar Transistor, 375A I(C), 600V V(BR)CES, N-Channel, Infineon Technologies AG CM600HU-12H vs BSM300GB60DLC

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