Datasheets
CM600E2Y-34H by:

Insulated Gate Bipolar Transistor, 600A I(C), 1700V V(BR)CES, N-Channel, MODULE-7

Part Details for CM600E2Y-34H by Mitsubishi Electric

Overview of CM600E2Y-34H by Mitsubishi Electric

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Applications Space Technology Aerospace and Defense Energy and Power Systems Renewable Energy

Part Details for CM600E2Y-34H

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CM600E2Y-34H Part Data Attributes

CM600E2Y-34H Mitsubishi Electric
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CM600E2Y-34H Mitsubishi Electric Insulated Gate Bipolar Transistor, 600A I(C), 1700V V(BR)CES, N-Channel, MODULE-7
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MITSUBISHI ELECTRIC CORP
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X7
Pin Count 7
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Mitsubishi
Case Connection ISOLATED
Collector Current-Max (IC) 600 A
Collector-Emitter Voltage-Max 1700 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 1
Number of Terminals 7
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 6200 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
VCEsat-Max 3.58 V

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