Part Details for CM50MXUA-24T by Mitsubishi Electric
Overview of CM50MXUA-24T by Mitsubishi Electric
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for CM50MXUA-24T
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
917-CM50MXUA-24T
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Mouser Electronics | IGBT Modules IGBT MODULE T-SERIES NX TYPE CIB A PACKAGE RoHS: Compliant | 0 |
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$124.6500 / $130.9100 | Order Now |
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DISTI #
CM50MXUA-24T
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Richardson RFPD | POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 1 | 0 |
|
RFQ |
Part Details for CM50MXUA-24T
CM50MXUA-24T CAD Models
CM50MXUA-24T Part Data Attributes
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CM50MXUA-24T
Mitsubishi Electric
Buy Now
Datasheet
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Compare Parts:
CM50MXUA-24T
Mitsubishi Electric
Insulated Gate Bipolar Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Date Of Intro | 2018-12-17 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 50 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | COMPLEX | |
| Fall Time-Max (tf) | 400 ns | |
| Gate-Emitter Thr Voltage-Max | 6.6 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PUFM-X23 | |
| Number of Elements | 7 | |
| Number of Terminals | 23 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 330 W | |
| Reference Standard | UL RECOGNIZED | |
| Rise Time-Max (tr) | 150 ns | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 900 ns | |
| Turn-on Time-Max (ton) | 450 ns | |
| VCEsat-Max | 2.15 V |