Transistors
CM400DU-24F
Description: Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

Overview of CM400DU-24F by Mitsubishi Electric

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  • Distributor Offerings: ( 1 listing )
  • Number of FFF Equivalents: ( 0 crosses )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 crosses )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Energy and Power Systems Renewable Energy

Price & Stock for CM400DU-24F by Mitsubishi Electric

Part # Manufacturer Description Stock Price Buy
DISTI # 31C0201
Newark Igbt, Module, 1.2Kv, 400A, Continuous Collector Current:400A, Collector Emitter Saturation Voltage:1.2Kv, Power Dissipation:1.1Kw, Operating Temperature Max:150°C, Igbt Termination:Tab, Collector Emitter Voltage Max:1.2Kv Rohs Compliant: No |Mitsubishi Electric CM400DU-24F Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk 0
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CAD Models for CM400DU-24F by Mitsubishi Electric
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Part Data Attributes for CM400DU-24F by Mitsubishi Electric

CM400DU-24F
Mitsubishi Electric
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Not Recommended
Ihs Manufacturer
MITSUBISHI ELECTRIC CORP
Part Package Code
MODULE
Package Description
FLANGE MOUNT, R-XUFM-X7
Pin Count
7
Reach Compliance Code
unknown
ECCN Code
EAR99
Case Connection
ISOLATED
Collector Current-Max (IC)
400 A
Collector-Emitter Voltage-Max
1200 V
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RTC
Gate-Emitter Voltage-Max
20 V
JESD-30 Code
R-XUFM-X7
Number of Elements
2
Number of Terminals
7
Operating Temperature-Max
150 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
1100 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
VCEsat-Max
2.4 V
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  1. CM400DU-24F
    Mitsubishi Electric
    Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
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