Part Details for CM400DU-12H by Mitsubishi Electric
Overview of CM400DU-12H by Mitsubishi Electric
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for CM400DU-12H
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
09B2218
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Newark | Igbt Module, Dual, 600V, 400A, Continuous Collector Current:400A, Collector Emitter Saturation Voltage:2.4V, Power Dissipation:1.13Kw, Operating Temperature Max:150°C, Igbt Termination:Tab, Collector Emitter Voltage Max:600V Rohs Compliant: No |Mitsubishi Electric CM400DU-12H RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for CM400DU-12H
CM400DU-12H CAD Models
CM400DU-12H Part Data Attributes
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CM400DU-12H
Mitsubishi Electric
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Datasheet
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CM400DU-12H
Mitsubishi Electric
Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel,
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
Package Description | FLANGE MOUNT, R-XUFM-X7 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | SUPER FAST RECOVERY | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 400 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X7 | |
Number of Elements | 2 | |
Number of Terminals | 7 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1130 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 350 ns | |
Turn-on Time-Nom (ton) | 250 ns | |
VCEsat-Max | 3 V |
Alternate Parts for CM400DU-12H
This table gives cross-reference parts and alternative options found for CM400DU-12H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CM400DU-12H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SML300HB06 | 400A, 600V, N-CHANNEL IGBT, METAL PACKAGE-9 | TT Electronics Power and Hybrid / Semelab Limited | CM400DU-12H vs SML300HB06 |
FF300R06KE3 | Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | CM400DU-12H vs FF300R06KE3 |
CM400DU-12H | Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, | Powerex Power Semiconductors | CM400DU-12H vs CM400DU-12H |
SKM300GB063D | Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, CASE D56, SEMITRANS3-7 | SEMIKRON | CM400DU-12H vs SKM300GB063D |
APTGF250A60D3G | Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, ROHS COMPLIANT, D3, 11 PIN | Microsemi Corporation | CM400DU-12H vs APTGF250A60D3G |
FF300R06KE3-B2 | Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | CM400DU-12H vs FF300R06KE3-B2 |
APTGT300A60D3G | Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, ROHS COMPLIANT, D3, 11 PIN | Microsemi Corporation | CM400DU-12H vs APTGT300A60D3G |
SKM300GB066D | Insulated Gate Bipolar Transistor, 390A I(C), 600V V(BR)CES, N-Channel, CASE D 56, SEMITRANS 3, 7 PIN | SEMIKRON | CM400DU-12H vs SKM300GB066D |
FF300R06KE3B2HOSA1 | Insulated Gate Bipolar Transistor | Infineon Technologies AG | CM400DU-12H vs FF300R06KE3B2HOSA1 |