Datasheets
CM400DU-12H by:

Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel,

Part Details for CM400DU-12H by Mitsubishi Electric

Overview of CM400DU-12H by Mitsubishi Electric

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Applications Industrial Automation Energy and Power Systems Renewable Energy Electronic Manufacturing

Price & Stock for CM400DU-12H

Part # Distributor Description Stock Price Buy
DISTI # 09B2218
Newark Igbt Module, Dual, 600V, 400A, Continuous Collector Current:400A, Collector Emitter Saturation Voltage:2.4V, Power Dissipation:1.13Kw, Operating Temperature Max:150°C, Igbt Termination:Tab, Collector Emitter Voltage Max:600V Rohs Compliant: No |Mitsubishi Electric CM400DU-12H RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk 0
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Part Details for CM400DU-12H

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CM400DU-12H Part Data Attributes

CM400DU-12H Mitsubishi Electric
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CM400DU-12H Mitsubishi Electric Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel,
Pbfree Code No
Rohs Code No
Part Life Cycle Code Not Recommended
Ihs Manufacturer MITSUBISHI ELECTRIC CORP
Package Description FLANGE MOUNT, R-XUFM-X7
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature SUPER FAST RECOVERY
Case Connection ISOLATED
Collector Current-Max (IC) 400 A
Collector-Emitter Voltage-Max 600 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1130 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 350 ns
Turn-on Time-Nom (ton) 250 ns
VCEsat-Max 3 V

Alternate Parts for CM400DU-12H

This table gives cross-reference parts and alternative options found for CM400DU-12H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CM400DU-12H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SML300HB06 400A, 600V, N-CHANNEL IGBT, METAL PACKAGE-9 TT Electronics Power and Hybrid / Semelab Limited CM400DU-12H vs SML300HB06
FF300R06KE3 Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG CM400DU-12H vs FF300R06KE3
CM400DU-12H Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, Powerex Power Semiconductors CM400DU-12H vs CM400DU-12H
SKM300GB063D Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, CASE D56, SEMITRANS3-7 SEMIKRON CM400DU-12H vs SKM300GB063D
APTGF250A60D3G Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, ROHS COMPLIANT, D3, 11 PIN Microsemi Corporation CM400DU-12H vs APTGF250A60D3G
FF300R06KE3-B2 Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG CM400DU-12H vs FF300R06KE3-B2
APTGT300A60D3G Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, ROHS COMPLIANT, D3, 11 PIN Microsemi Corporation CM400DU-12H vs APTGT300A60D3G
SKM300GB066D Insulated Gate Bipolar Transistor, 390A I(C), 600V V(BR)CES, N-Channel, CASE D 56, SEMITRANS 3, 7 PIN SEMIKRON CM400DU-12H vs SKM300GB066D
FF300R06KE3B2HOSA1 Insulated Gate Bipolar Transistor Infineon Technologies AG CM400DU-12H vs FF300R06KE3B2HOSA1

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