Part Details for CM1200DB-34N by Mitsubishi Electric
Overview of CM1200DB-34N by Mitsubishi Electric
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Education and Research
Audio and Video Systems
Healthcare
Entertainment and Gaming
Price & Stock for CM1200DB-34N
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
07AH2187
|
Newark | Igbt Module. 472,06 . 1200A 1700V |Mitsubishi Electric CM1200DB-34N Min Qty: 3 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now |
Part Details for CM1200DB-34N
CM1200DB-34N CAD Models
CM1200DB-34N Part Data Attributes:
|
CM1200DB-34N
Mitsubishi Electric
Buy Now
Datasheet
|
Compare Parts:
CM1200DB-34N
Mitsubishi Electric
Insulated Gate Bipolar Transistor, 1200A I(C), 1700V V(BR)CES, N-Channel, MODULE-10
|
Part Life Cycle Code | Active | |
Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
Part Package Code | MODULE | |
Package Description | FLANGE MOUNT, R-XUFM-X10 | |
Pin Count | 10 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | HIGH RELIABILITY | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 1200 A | |
Collector-Emitter Voltage-Max | 1700 V | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X10 | |
Number of Elements | 2 | |
Number of Terminals | 10 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 6900 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 1500 ns | |
Turn-on Time-Nom (ton) | 1400 ns | |
VCEsat-Max | 2.8 V |